Authors: Mynbaeva, M Saddow, SE Melnychuk, G Nikitina, I Scheglov, M Sitnikova, A Kuznetsov, N Mynbaev, K Dmitriev, V

Citation: M. Mynbaeva et al., Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates, APPL PHYS L, 78(1), 2001, pp. 117-119

Authors: Nikolaev, A Nikitina, I Zubrilov, A Mynbaeva, M Melnik, Y Dmitriev, V

Citation: A. Nikolaev et al., AlN wafers fabricated by hydride vapor phase epitaxy, MRS I J N S, 5, 2000, pp. NIL_371-NIL_375

Authors: Mynbaeva, M Titkov, A Kryganovskii, A Ratnikov, V Mynbaev, K Huhtinen, H Laiho, R Dmitriev, V

Citation: M. Mynbaeva et al., Structural characterization and strain relaxation in porous GaN layers, APPL PHYS L, 76(9), 2000, pp. 1113-1115

Authors: Dmitriev, V Rendakova, S Kuznetsov, N Savkina, N Andreev, A Rastegaeva, M Mynbaeva, M Morozov, A

Citation: V. Dmitriev et al., Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density, MAT SCI E B, 61-2, 1999, pp. 446-449