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Results:
1-7
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Results: 7
Authors:
Myoung, JM
Shim, KH
Kim, S
Citation: Jm. Myoung et al., Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(2A), 2001, pp. 476-479
Authors:
Kim, DW
Bae, JC
Kim, WJ
Baik, HK
Myoung, JM
Lee, SM
Citation: Dw. Kim et al., The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment, J ELEC MAT, 30(3), 2001, pp. 183-187
Authors:
Rhee, SH
Yang, Y
Choi, HS
Myoung, JM
Kim, K
Citation: Sh. Rhee et al., Low-temperature deposition of highly [100]-oriented MgO films using charged liquid cluster beam, THIN SOL FI, 396(1-2), 2001, pp. 23-28
Authors:
Kim, S
Henry, RL
Wickenden, AE
Koleske, DD
Rhee, SJ
White, JO
Myoung, JM
Kim, K
Li, X
Coleman, JJ
Bishop, SG
Citation: S. Kim et al., Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN, J APPL PHYS, 90(1), 2001, pp. 252-259
Authors:
Myoung, JM
Kim, K
Citation: Jm. Myoung et K. Kim, Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy, J VAC SCI A, 18(2), 2000, pp. 450-456
Authors:
Kim, S
Hong, JK
Moon, BM
Sung, MY
Myoung, JM
Bishop, SG
Citation: S. Kim et al., Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN, J KOR PHYS, 37(6), 2000, pp. 993-997
Authors:
Myoung, JM
Gluschenkov, O
Kim, K
Kim, S
Citation: Jm. Myoung et al., Growth kinetics of GaN and effects of flux ratio on the properties of GaN films grown by plasma-assisted molecular beam epitaxy, J VAC SCI A, 17(5), 1999, pp. 3019-3028
Risultati:
1-7
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