Authors:
HARUYAMA J
NEGISHI H
NISHIMURA Y
NASHIMOTO Y
Citation: J. Haruyama et al., SUBSTRATE-RELATED KINK EFFECTS WITH A STRONG LIGHT-SENSITIVITY IN ALGAAS INGAAS PHEMT/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 25-33
Citation: J. Haruyama et al., KINK EFFECT RELATED TO THE SELF-SIDE-GATING EFFECT IN GAAS-MESFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1873-1875
Citation: J. Haruyama et al., PHOTOEMISSIONS RELATED TO THE KINK EFFECT IN GAAS METAL-SEMICONDUCTORFIELD-EFFECT TRANSISTORS WITH AN AL0.2GA0.8AS GAAS BUFFER LAYER/, Applied physics letters, 63(5), 1993, pp. 648-650