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Results: 1-9 |
Results: 9
STRESS EFFECT ON SUSPENDED POLYCRYSTALLINE SILICON MEMBRANES FABRICATED BY MICROMACHINING OF POROUS SILICON
Authors: KALTSAS G NASSIOPOULOU AG SIAKAVELLAS M ANASTASSAKIS E
Citation: G. Kaltsas et al., STRESS EFFECT ON SUSPENDED POLYCRYSTALLINE SILICON MEMBRANES FABRICATED BY MICROMACHINING OF POROUS SILICON, Sensors and actuators. A, Physical, 68(1-3), 1998, pp. 429-434
FRONTSIDE BULK SILICON MICROMACHINING USING POROUS-SILICON TECHNOLOGY
Authors: KALTSAS G NASSIOPOULOU AG
Citation: G. Kaltsas et Ag. Nassiopoulou, FRONTSIDE BULK SILICON MICROMACHINING USING POROUS-SILICON TECHNOLOGY, Sensors and actuators. A, Physical, 65(2-3), 1998, pp. 175-179
THICKNESS DETERMINATION OF THIN-FILMS BASED ON X-RAY SIGNAL DECAY LAW
Authors: KALTSAS G GLEZOS N VALAMONTES E NASSIOPOULOU AG
Citation: G. Kaltsas et al., THICKNESS DETERMINATION OF THIN-FILMS BASED ON X-RAY SIGNAL DECAY LAW, Surface and interface analysis, 26(12), 1998, pp. 876-884
HIGH CRYSTALLINE QUALITY TITANIUM DISILICIDES FORMED BY SPUTTER-DEPOSITION OF TI SI MULTILAYERS AND ANNEALING/
Authors: REVVA P KASTANAS A TRAVLOS A NASSIOPOULOU AG
Citation: P. Revva et al., HIGH CRYSTALLINE QUALITY TITANIUM DISILICIDES FORMED BY SPUTTER-DEPOSITION OF TI SI MULTILAYERS AND ANNEALING/, Vacuum, 51(3), 1998, pp. 335-337
POROUS SILICON OF VARIABLE POROSITY UNDER HIGH HYDROSTATIC-PRESSURE -RAMAN AND PHOTOLUMINESCENCE STUDIES
Authors: PAPADIMITRIOU D RAPTIS YS NASSIOPOULOU AG KALTSAS G
Citation: D. Papadimitriou et al., POROUS SILICON OF VARIABLE POROSITY UNDER HIGH HYDROSTATIC-PRESSURE -RAMAN AND PHOTOLUMINESCENCE STUDIES, Physica status solidi. a, Applied research, 165(1), 1998, pp. 43-48
STABLE VISIBLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM NANOCRYSTALLINE SILICON THIN-FILMS FABRICATED ON THIN SIO2 LAYERS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: NASSIOPOULOU AG IOANNOUSOUGLERIDIS V PHOTOPOULOS P TRAVLOS A TSAKIRI V PAPADIMITRIOU D
Citation: Ag. Nassiopoulou et al., STABLE VISIBLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM NANOCRYSTALLINE SILICON THIN-FILMS FABRICATED ON THIN SIO2 LAYERS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Physica status solidi. a, Applied research, 165(1), 1998, pp. 79-85
ELECTROLUMINESCENCE FROM SI CAF2 MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: IOANNOUSOUGLERIDIS V TSAKIRI V NASSIOPOULOU AG PHOTOPOULOS P BASSANI F DAVITAYA FA
Citation: V. Ioannousougleridis et al., ELECTROLUMINESCENCE FROM SI CAF2 MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY/, Physica status solidi. a, Applied research, 165(1), 1998, pp. 97-103
POLARIZED RAMAN AND PHOTOLUMINESCENCE STUDY ON SILICON QUANTUM WIRES
Authors: PAPADIMITRIOU D NASSIOPOULOU AG
Citation: D. Papadimitriou et Ag. Nassiopoulou, POLARIZED RAMAN AND PHOTOLUMINESCENCE STUDY ON SILICON QUANTUM WIRES, Journal of applied physics, 84(2), 1998, pp. 1059-1063
LAW SPECIFIC CONTACT RESISTIVITY TITANIUM SILICIDES ON N(-DEPOSITION OF TI() AND P(+) SILICON BY SPUTTER)SI MULTILAYERS AND ANNEALING/
Authors: REVVA P KASTANAS A NASSIOPOULOU AG
Citation: P. Revva et al., LAW SPECIFIC CONTACT RESISTIVITY TITANIUM SILICIDES ON N(-DEPOSITION OF TI() AND P(+) SILICON BY SPUTTER)SI MULTILAYERS AND ANNEALING/, Journal of the Electrochemical Society, 144(11), 1997, pp. 4072-4076
Risultati: 1-9 |