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Results: 1-25 | 26-28 |
Results: 26-28/28
SURFACE RELAXATION KINETICS AND GROWTH INTERRUPTION EFFECTS IN GAAS ALAS SINGLE QUANTUM-WELLS/
Authors: YOSHINAGA A MOOKHERJEE P MURRAY R NEAVE JH JOYCE BA
Citation: A. Yoshinaga et al., SURFACE RELAXATION KINETICS AND GROWTH INTERRUPTION EFFECTS IN GAAS ALAS SINGLE QUANTUM-WELLS/, Journal of crystal growth, 127(1-4), 1993, pp. 788-792
INCORPORATION OF SILICON DURING MBE GROWTH OF GAAS ON (111)A SUBSTRATES
Authors: FAHY MR NEAVE JH ASHWIN MJ MURRAY R NEWMAN RC JOYCE BA KADOYA Y SAKAKI H
Citation: Mr. Fahy et al., INCORPORATION OF SILICON DURING MBE GROWTH OF GAAS ON (111)A SUBSTRATES, Journal of crystal growth, 127(1-4), 1993, pp. 871-876
REFLECTANCE ANISOTROPY AS A SURFACE SCIENCE PROBE OF THE GROWTH OF INAS ON (001) GAAS BY MOLECULAR-BEAM EPITAXY
Authors: ARMSTRONG SR PEMBLE ME TAYLOR AG FAWCETTE PN NEAVE JH JOYCE BA ZHANG J
Citation: Sr. Armstrong et al., REFLECTANCE ANISOTROPY AS A SURFACE SCIENCE PROBE OF THE GROWTH OF INAS ON (001) GAAS BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 63(4), 1993, pp. 503-505
Risultati: 1-25 | 26-28 |