INCORPORATION OF SILICON DURING MBE GROWTH OF GAAS ON (111)A SUBSTRATES

Authors
FAHY MR NEAVE JH ASHWIN MJ MURRAY R NEWMAN RC JOYCE BA KADOYA Y SAKAKI H
Citation
Mr. Fahy et al., INCORPORATION OF SILICON DURING MBE GROWTH OF GAAS ON (111)A SUBSTRATES, Journal of crystal growth, 127(1-4), 1993, pp. 871-876
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
871 - 876
Database
ISI
SICI code
0022-0248(1993)127:1-4<871:IOSDMG>2.0.ZU;2-6
Abstract
Si-doped GaAs has been grown on (111)A and (111)A vicinal GaAs substra tes and carrier concentrations measured for a range of Si fluxes and g rowth temperatures. The use of As2 as opposed to As4 has been examined . These results are discussed with respect to the growth mechanisms. P hotoluminescence measurements have been made and compared with growth on an (001) substrate. The nature of the lattice site of incorporated Si is confirmed using local vibrational mode measurements.