Authors: NEE TE YEH NT CHYI JI LEE CT

Citation: Te. Nee et al., MATRIX-DEPENDENT STRUCTURAL AND PHOTOLUMINESCENCE PROPERTIES OF IN0.5GA0.5AS QUANTUM DOTS CROWN BY MOLECULAR-BEAM EPITAXY, Solid-state electronics, 42(7-8), 1998, pp. 1331-1334

Authors: CHANG MN PAN JW CHYI JI HSIEH KC NEE TE

Citation: Mn. Chang et al., EFFECT OF COLUMN III VACANCY ON ARSENIC PRECIPITATION IN LOW-TEMPERATURE-GROWN III-V ARSENIDES, Applied physics letters, 72(5), 1998, pp. 587-589

Authors: CHYI JI NEE TE LEE CT SHIEH JL PAN JW

Citation: Ji. Chyi et al., FORMATION OF SELF-ORGANIZED IN0.5GA0.5AS QUANTUM DOTS ON GAAS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 777-781

Authors: LEE CT TSAI CD WANG CY SHIAO HP NEE TE SHEN JN

Citation: Ct. Lee et al., SIDEGATING EFFECT IMPROVEMENT OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MULTIQUANTUM BARRIER STRUCTURE, Applied physics letters, 67(14), 1995, pp. 2046-2048

Authors: CHYI JI SHIEH JL LIN RM NEE TE PAN JW

Citation: Ji. Chyi et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS, Applied physics letters, 65(6), 1994, pp. 699-701