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Results: 51-73/73
Authors:
POWERS MJ
BENJAMIN MC
PORTER LM
NEMANICH RJ
DAVIS RF
CUOMO JJ
DOLL GL
HARRIS SJ
Citation: Mj. Powers et al., OBSERVATION OF A NEGATIVE ELECTRON-AFFINITY FOR BORON-NITRIDE, Applied physics letters, 67(26), 1995, pp. 3912-3914
Authors:
MONTGOMERY JS
SCHNEIDER TP
CARTER RJ
BARNAK JP
CHEN YL
HAUSER JR
NEMANICH RJ
Citation: Js. Montgomery et al., MORPHOLOGY OF SI(100) SURFACES EXPOSED TO A REMOTE H PLASMA, Applied physics letters, 67(15), 1995, pp. 2194-2196
Authors:
MCGUIRE GE
SWANSON ML
PARIKH NR
SIMKO S
WEISS PS
FERRIS JH
NEMANICH RJ
CHOPRA DR
CHOURASIA AR
Citation: Ge. Mcguire et al., SURFACE CHARACTERIZATION, Analytical chemistry, 67(12), 1995, pp. 199-220
Authors:
VANDERWEIDE J
NEMANICH RJ
Citation: J. Vanderweide et Rj. Nemanich, ANGLE-RESOLVED PHOTOEMISSION OF DIAMOND (111) AND (100) SURFACES - NEGATIVE ELECTRON-AFFINITY AND BAND-STRUCTURE MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2475-2479
Authors:
BAUMANN PK
HUMPHREYS TP
NEMANICH RJ
ISHIBASHI K
PARIKH NR
PORTER LM
DAVIS RF
Citation: Pk. Baumann et al., EPITAXIAL CU CONTACTS ON SEMICONDUCTING DIAMOND, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 883-886
Authors:
SUKOW CA
NEMANICH RJ
Citation: Ca. Sukow et Rj. Nemanich, MORPHOLOGY OF TISI2 AND ZRSI2 ON SI(100) AND (111) SURFACES (VOL 9, PG 1214, 1994), Journal of materials research, 9(8), 1994, pp. 2198-2198
Authors:
SUKOW CA
NEMANICH RJ
Citation: Ca. Sukow et Rj. Nemanich, MORPHOLOGY OF TISI2 AND ZRSI2 ON SI(100) AND (111) SURFACES, Journal of materials research, 9(5), 1994, pp. 1214-1227
Authors:
VANDERWEIDE J
ZHANG Z
BAUMANN PK
WENSELL MG
BERNHOLC J
NEMANICH RJ
Citation: J. Vanderweide et al., NEGATIVE-ELECTRON-AFFINITY EFFECTS ON THE DIAMOND (100) SURFACE, Physical review. B, Condensed matter, 50(8), 1994, pp. 5803-5806
Authors:
ALDRICH DB
NEMANICH RJ
SAYERS DE
Citation: Db. Aldrich et al., BOND-LENGTH RELAXATION IN SI1-XGEX ALLOYS, Physical review. B, Condensed matter, 50(20), 1994, pp. 15026-15033
Authors:
VANDERWEIDE J
NEMANICH RJ
Citation: J. Vanderweide et Rj. Nemanich, INFLUENCE OF INTERFACIAL HYDROGEN AND OXYGEN ON THE SCHOTTKY-BARRIER HEIGHT OF NICKEL ON (111) AND (100) DIAMOND SURFACES, Physical review. B, Condensed matter, 49(19), 1994, pp. 13629-13637
Authors:
EDWARDS AM
DAO Y
NEMANICH RJ
SAYERS DE
KEMNER KM
Citation: Am. Edwards et al., STRUCTURAL INVESTIGATION OF THE INITIAL INTERFACE REGION FORMED BY THIN ZIRCONIUM FILMS ON SILICON(111), Journal of applied physics, 76(8), 1994, pp. 4630-4635
Authors:
BERGMAN L
MCCLURE MT
GLASS JT
NEMANICH RJ
Citation: L. Bergman et al., THE ORIGIN OF THE BROAD-BAND LUMINESCENCE AND THE EFFECT OF NITROGEN DOPING ON THE OPTICAL-PROPERTIES OF DIAMOND FILMS, Journal of applied physics, 76(5), 1994, pp. 3020-3027
Authors:
CARTER RJ
SCHNEIDER TP
MONTGOMERY JS
NEMANICH RJ
Citation: Rj. Carter et al., IN-SITU REMOTE H-PLASMA CLEANING OF PATTERNED SI-SIO2 SURFACES, Journal of the Electrochemical Society, 141(11), 1994, pp. 3136-3140
Authors:
DAO Y
EDWARDS AM
YING H
CHEN YL
SAYERS DE
NEMANICH RJ
Citation: Y. Dao et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF (TI0.9ZR0.1)SI-2 THIN-FILMS ON SI(111), Applied physics letters, 65(19), 1994, pp. 2413-2415
DETERMINATION OF EXCESS PHOSPHORUS IN LOW-TEMPERATURE GAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors:
HE Y
ELMASRY NA
RAMDANI J
BEDAIR SM
MCCORMICK TL
NEMANICH RJ
WEBER ER
Citation: Y. He et al., DETERMINATION OF EXCESS PHOSPHORUS IN LOW-TEMPERATURE GAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(13), 1994, pp. 1671-1673
Authors:
BENJAMIN MC
WANG C
DAVIS RF
NEMANICH RJ
Citation: Mc. Benjamin et al., OBSERVATION OF A NEGATIVE ELECTRON-AFFINITY FOR HETEROEPITAXIAL ALN ON ALPHA(6H)-SIC(0001), Applied physics letters, 64(24), 1994, pp. 3288-3290
Authors:
EDWARDS AM
DAO Y
NEMANICH RJ
SAYERS DE
Citation: Am. Edwards et al., EXAFS STUDY OF THE INITIAL INTERFACE REGION FORMED BY THIN ZIRCONIUM AND TITANIUM FILMS ON SILICON(111), JPN J A P 1, 32, 1993, pp. 393-395
Authors:
DAO Y
EDWARDS AM
NEMANICH RJ
SAYERS DE
Citation: Y. Dao et al., X-RAY-ABSORPTION STUDY OF THE REACTION OF ZIRCONIUM THIN-FILMS ON SILICON(111), JPN J A P 1, 32, 1993, pp. 396-398
Authors:
ALDRICH DB
NEMANICH RJ
SAYERS DE
Citation: Db. Aldrich et al., XAFS STUDY OF SOME TITANIUM-SILICON AND GERMANIUM COMPOUNDS, JPN J A P 1, 32, 1993, pp. 725-727
Authors:
NEMANICH RJ
BERGMAN L
TURNER KF
VANDERWEIDE J
HUMPHREYS TP
Citation: Rj. Nemanich et al., PROPERTIES OF INTERFACES OF DIAMOND, Physica. B, Condensed matter, 185(1-4), 1993, pp. 528-538
Authors:
BERGMAN L
STONER BR
TURNER KF
GLASS JT
NEMANICH RJ
Citation: L. Bergman et al., MICROPHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDY OF DEFECT FORMATIONIN DIAMOND FILMS, Journal of applied physics, 73(8), 1993, pp. 3951-3957
Authors:
VANDERWEIDE J
NEMANICH RJ
Citation: J. Vanderweide et Rj. Nemanich, ARGON AND HYDROGEN PLASMA INTERACTIONS ON DIAMOND (111) SURFACES - ELECTRONIC STATES AND STRUCTURE, Applied physics letters, 62(16), 1993, pp. 1878-1880
Authors:
MCGUIRE GE
RAY MA
SIMKO SJ
PERKINS FK
BRANDOW SL
DOBISZ EA
NEMANICH RJ
CHOURASIA AR
CHOPRA DR
Citation: Ge. Mcguire et al., SURFACE CHARACTERIZATION, Analytical chemistry, 65(12), 1993, pp. 311-333