Authors: IMAMOV RM LOMOV AA SIROCHENKO VN IGNATEV AS MOKEROV VG NEMTSEV GZ FEDOROV YV

Citation: Rm. Imamov et al., STUDY OF AN INGAAS GAAS(100) HETEROSTRUCTURE BY HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY/, Semiconductors, 28(8), 1994, pp. 761-764

Authors: KARACHEVTSEVA MV IGNATEV AS MOKEROV VG NEMTSEV GZ STRAKHOV VA YAREMENKO NG

Citation: Mv. Karachevtseva et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/, Semiconductors, 28(7), 1994, pp. 691-694

Authors: IGNATEV AS KAMINSKII VE KOPYLOV VB NEMTSEV GZ

Citation: As. Ignatev et al., STATIC CHARACTERISTICS OF A SELECTIVELY DOPED PSEUDOMORPHIC FIELD-EFFECT TRANSISTOR, Semiconductors, 28(5), 1994, pp. 464-466

Authors: IGNATEV AS KARACHEVTSEVA MV MOKEROV VG NEMTSEV GZ STRAKHOV VA YAREMENKO NG

Citation: As. Ignatev et al., WIDTH OF EXCITON LINE IN THE LOW-TEMPERATURE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS STRUCTURES WITH SINGLE QUANTUM-WELLS/, Semiconductors, 28(1), 1994, pp. 75-79

Authors: IGNATEV AS KAMENEV AV KOPYLOV VB NEMTSEV GZ POSVYANSKII DV

Citation: As. Ignatev et al., STATIC CURRENT-VOLTAGE CHARACTERISTICS OF RESONANT TUNNEL-DIODES BASED ON GAAS ALAS HETEROSTRUCTURES/, Semiconductors, 27(5), 1993, pp. 423-426

Authors: AFANASEV AM IMAMOV RM MASLOV AV MOKEROV VG PASHAEV EM VAVILOV AB IGNATEV AS NEMTSEV GZ ZAITSEV AA

Citation: Am. Afanasev et al., STUDY OF SUPERLATTICE TOP LAYERS BY THE S TANDING X-RAY WAVES TECHNIQUE, Kristallografia, 38(3), 1993, pp. 58-62