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Results:
1-16
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Results: 16
Authors:
CHEN LY
HUNTER GW
NEUDECK PG
KNIGHT D
Citation: Ly. Chen et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE HEATING EFFECTS ON PD 6H-SIC SCHOTTKY STRUCTURE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2890-2895
Authors:
NEUDECK PG
Citation: Pg. Neudeck, PERIMETER GOVERNED MINORITY-CARRIER LIFETIMES IN 4H-SIC P(+)N DIODES MEASURED BY REVERSE RECOVERY SWITCHING TRANSIENT ANALYSIS, Journal of electronic materials, 27(4), 1998, pp. 317-323
Authors:
RAMUNGUL N
KHEMKA V
TYAGI R
CHOW TP
GHEZZO M
NEUDECK PG
KRETCHMER J
HENNESSY W
BROWN DM
Citation: N. Ramungul et al., COMPARISON OF ALUMINUM-IMPLANTED AND BORON-IMPLANTED VERTICAL 6H-SIC P+N JUNCTION DIODES, Solid-state electronics, 42(1), 1998, pp. 17-22
Authors:
NEUDECK PG
FAZI C
Citation: Pg. Neudeck et C. Fazi, POSITIVE TEMPERATURE-COEFFICIENT OF BREAKDOWN VOLTAGE IN 4H-SIC PN JUNCTION RECTIFIERS, IEEE electron device letters, 18(3), 1997, pp. 96-98
Authors:
CHEN LY
HUNTER GW
NEUDECK PG
BANSAL G
PETIT JB
KNIGHT D
Citation: Ly. Chen et al., COMPARISON OF INTERFACIAL AND ELECTRONIC-PROPERTIES OF ANNEALED PD SIC AND PD/SIO2/SIC SCHOTTKY DIODE SENSORS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1228-1234
Authors:
YOGANATHAN M
CHOYKE WJ
DEVATY RP
NEUDECK PG
Citation: M. Yoganathan et al., FREE TO BOUND TRANSITION-RELATED ELECTROLUMINESCENCE IN 3C AND 6H SICP(-N JUNCTIONS AT ROOM-TEMPERATURE()), Journal of applied physics, 80(3), 1996, pp. 1763-1767
Authors:
NEUDECK PG
FAZI C
Citation: Pg. Neudeck et C. Fazi, HIGH-FIELD FAST-RISETIME PULSE FAILURES IN 4H-SIC AND 6H-SIC PN JUNCTION DIODES, Journal of applied physics, 80(2), 1996, pp. 1219-1225
Authors:
NEUDECK PG
Citation: Pg. Neudeck, PROGRESS IN SILICON-CARBIDE SEMICONDUCTOR ELECTRONICS TECHNOLOGY, Journal of electronic materials, 24(4), 1995, pp. 283-288
Authors:
SADDOW SE
LANG M
DALIBOR T
PENSL G
NEUDECK PG
Citation: Se. Saddow et al., THERMAL CAPACITANCE SPECTROSCOPY OF EPITAXIAL 3C AND 6H-SIC PN JUNCTION DIODES GROWN SIDE-BY-SIDE ON A GH-SIC SUBSTRATE, Applied physics letters, 66(26), 1995, pp. 3612-3614
Authors:
NEUDECK PG
POWELL JA
Citation: Pg. Neudeck et Ja. Powell, PERFORMANCE LIMITING MICROPIPE DEFECTS IN SILICON-CARBIDE WAFERS, IEEE electron device letters, 15(2), 1994, pp. 63-65
Authors:
NEUDECK PG
LARKIN DJ
STARR JE
POWELL JA
SALUPO CS
MATUS LG
Citation: Pg. Neudeck et al., ELECTRICAL-PROPERTIES OF EPITAXIAL 3C-SIC AND 6H-SIC P-N-JUNCTION DIODES PRODUCED SIDE-BY-SIDE ON 6H-SIC SUBSTRATES, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 826-835
Authors:
SADDOW SE
CHO PS
GOLDHAR J
LEE CH
NEUDECK PG
Citation: Se. Saddow et al., SUBNANOSECOND PHOTOVOLTAIC RESPONSE IN 6H-SIC, Applied physics letters, 65(26), 1994, pp. 3359-3361
Authors:
LARKIN DJ
NEUDECK PG
POWELL JA
MATUS LG
Citation: Dj. Larkin et al., SITE-COMPETITION EPITAXY FOR SUPERIOR SILICON-CARBIDE ELECTRONICS, Applied physics letters, 65(13), 1994, pp. 1659-1661
Authors:
MAZZOLA MS
SADDOW SE
NEUDECK PG
LAKDAWALA VK
WE S
Citation: Ms. Mazzola et al., OBSERVATION OF THE D-CENTER IN 6H-SIC P-N DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(20), 1994, pp. 2730-2732
Authors:
NEUDECK PG
LARKIN DJ
POWELL JA
MATUS LG
SALUPO CS
Citation: Pg. Neudeck et al., 2000-V 6H-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(11), 1994, pp. 1386-1388
Authors:
NEUDECK PG
LARKIN DJ
POWELL JA
MATUS LG
Citation: Pg. Neudeck et al., HIGH-VOLTAGE 6H-SIC RECTIFIERS - PROSPECTS AND PROGRESS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2130-2130
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1-16
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