Authors: YOW HK HOUSTON PA BUTTON CC DAVID JPR NG CMS

Citation: Hk. Yow et al., EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE DEVICE CHARACTERISTICS OF GA0.52IN0.48P GAAS AND AL0.52IN0.48P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(1), 1998, pp. 17-23

Authors: NG CMS HOUSTON PA YOW HK

Citation: Cms. Ng et al., ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF CURRENT GAIN IN HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 17-24

Authors: YOW HK HOUSTON PA NG CMS BUTTON C ROBERTS JS

Citation: Hk. Yow et al., HIGH-TEMPERATURE DC CHARACTERISTICS OF ALXGA0.52-XIN0.48P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 2-7