Authors: ROLDAN JM CRESSLER JD NIU G CLARK SD NGUYENNGOC D

Citation: Jm. Roldan et al., GAMMA-RADIATION TOLERANCE OF UHV CVD SIGE BICMOS TECHNOLOGY OPERATED AT CRYOGENIC TEMPERATURES/, Journal de physique. IV, 8(P3), 1998, pp. 99-102

Authors: SUNDERLAND DA AHLGREN DC GILBERT MM JENG SJ MALINOWSKI JC NGUYENNGOC D SCHONENBERG KT STEIN KJ MEYERSON BS HARAME DL

Citation: Da. Sunderland et al., MANUFACTURABILITY AND APPLICATIONS OF SIGE HBT TECHNOLOGY, Solid-state electronics, 41(10), 1997, pp. 1503-1507

Authors: ROLDAN JM ANSLEY WE CRESSLER JD CLARK SD NGUYENNGOC D

Citation: Jm. Roldan et al., NEUTRON RADIATION TOLERANCE OF ADVANCED UHV CVD SIGE HBT BICMOS TECHNOLOGY/, IEEE transactions on nuclear science, 44(6), 1997, pp. 1965-1973

Authors: NGUYENNGOC D SUNDERLAND DA AHLGREN DC JENG SJ GILBERT MM MALINOWSKI JC SCHONENBERG KT STEIN KS MEYERSON BS HARAME DL

Citation: D. Nguyenngoc et al., A MANUFACTURABLE POLYEMITTER GRADED-SIGE HBT TECHNOLOGY FOR WIRELESS AND MIXED-SIGNAL APPLICATIONS, Applied surface science, 102, 1996, pp. 194-201

Authors: AHLGREN DC GILBERT M JENG SJ MALINOWSKI J NGUYENNGOC D SCHONENBERG K STEIN K SUNDERLAND D SOYUER M MEYERSON B HARAME D

Citation: Dc. Ahlgren et al., SI-GE HETEROJUNCTION BIPOLAR TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUITS, Canadian journal of physics, 74, 1996, pp. 159-166