This article reviews the status of IBM's SiGe HBT technology, with a f
ocus on manufacturability issues and circuit applications. Device desi
gn and process integration issues which have driven the development of
the technology are discussed. Device results are shown, emphasizing t
he demonstration of reproducibility and yield in the manufacturing env
ironment. Reproducibility of parameters for the 47/65 GHz (f(T)/f(MAX)
) SiGe HBT is shown to be superior to that of BJTs in state-of-the-art
implanted-base processes. Recent circuit results, covering the perfor
mance range from 1 to 23 GHz, are reviewed. The addition of a polyimid
e/gold backend process fbr low-loss inductors and transmission lines i
s key to MMIC applications operating at 12 GHz and above. (C) 1997 Els
evier Science Ltd.