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TERAUCHI M
SHIGYO N
NITAYAMA A
HORIGUCHI F
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WATANABE S
TSUCHIDA K
TAKASHIMA D
OOWAKI Y
NITAYAMA A
HIEDA K
TAKATO H
SUNOUCHI K
HORIGUCHI F
OHUCHI K
MASUOKA F
HARA H
Citation: S. Watanabe et al., A NOVEL CIRCUIT TECHNOLOGY WITH SURROUNDING GATE TRANSISTORS (SGTS) FOR ULTRA-HIGH DENSITY DRAMS, IEEE journal of solid-state circuits, 30(9), 1995, pp. 960-971