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Results: 10

Authors: NOH JH ASAHI H KIM SJ GONDA S
Citation: Jh. Noh et al., SCANNING-TUNNELING-MICROSCOPY STUDY ON SELF-FORMATION PROCESS OF QUANTUM-DOT STRUCTURES BY THE GROWTH OF GAP INP SHORT-PERIOD SUPERLATTICESON GAAS(311)A SUBSTRATE/, JPN J A P 1, 37(6B), 1998, pp. 3793-3795

Authors: KIM JK HAN SH PARK YD NOH JH
Citation: Jk. Kim et al., MATERIAL PROPERTIES OF SELF-FLOWING CONCRETE, Journal of materials in civil engineering, 10(4), 1998, pp. 244-249

Authors: NOH JH
Citation: Jh. Noh, GEOCHEMISTRY AND PARAGENESIS OF HEULANDITE CEMENTS IN A MIOCENE MARINE FAN-DELTA SYSTEM OF THE POHANG BASIN, REPUBLIC-OF-KOREA, Clays and clay minerals, 46(2), 1998, pp. 204-214

Authors: KUROIWA R ASAHI H IWATA K KIM SJ NOH JH ASAMI K GONDA S
Citation: R. Kuroiwa et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAN-RICH SIDE OF GANP ALLOYS AND THEIR OBSERVATION BY SCANNING-TUNNELING-MICROSCOPY, JPN J A P 1, 36(6B), 1997, pp. 3810-3813

Authors: NOH JH ASAHI H KIM SJ GONDA S
Citation: Jh. Noh et al., SCANNING TUNNELING MICROSCOPY SPECTROSCOPY STUDY OF SELF-ORGANIZED QUANTUM-DOT STRUCTURES FORMED IN GAP/INP SHORT-PERIOD SUPERLATTICES/, JPN J A P 1, 36(6B), 1997, pp. 3818-3820

Authors: YU SJ CHO NI ASAHI H IWATA K KUROIWA R NOH JH ASAMI K GONDA S
Citation: Sj. Yu et al., ION-REMOVED ELECTRON-CYCLOTRON-RESONANCE MOLECULAR-BEAM-EPITAXY GROWTH OF INGAN ON (0001)AL2O3, Journal of the Korean Physical Society, 30, 1997, pp. 127-130

Authors: KIM SJ ASAHI H TAKEMOTO M NOH JH ASAMI K GONDA S
Citation: Sj. Kim et al., HIGH-DENSITY OF SELF-ORGANIZED QUANTUM DOTS FORMED IN (GAP)(N)(INP)(M) SHORT-PERIOD SUPERLATTICES GROWN ON GAAS (N-11), Applied surface science, 114, 1997, pp. 97-102

Authors: KIM SJ ASAHI H TAKEMOTO M ASAMI K NOH JH GONDA S
Citation: Sj. Kim et al., SELF-ORGANIZED QUANTUM-DOT STRUCTURES IN STRAINED (GAP)(N)(INP)(M) SHORT-PERIOD SUPERLATTICES GROWN ON GAAS(N11) BY GAS-SOURCE MBE, Journal of crystal growth, 175, 1997, pp. 754-759

Authors: NOH JH ASAHI H KIM SJ TAKEMOTO M GONDA S
Citation: Jh. Noh et al., SCANNING-TUNNELING-MICROSCOPY SCANNING TUNNELING SPECTROSCOPY OBSERVATION OF III-V COMPOUND SEMICONDUCTOR NANOSTRUCTURES, JPN J A P 1, 35(6B), 1996, pp. 3743-3748

Authors: NOH JH ASAHI H WATANABE H GONDA S
Citation: Jh. Noh et al., POSSIBILITY FOR THE DISCRIMINATION OF SUBMONOLAYER INAS AND GAAS GROWN ON TILTED GAAS SUBSTRATE, JPN J A P 2, 35(3B), 1996, pp. 362-365
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