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Authors:
MICOVIC M
NORDQUIST CD
LUBYSHEV D
MAYER TS
MILLER DL
STREATER RW
SPRINGTHORPE AJ
Citation: M. Micovic et al., FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 962-967
Citation: L. Zavieh et al., OPTIMIZATION OF IN0.53GA0.47AS REACTIVE ION ETCHING WITH CH4 H-2 USING DESIGN OF EXPERIMENT METHODS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1024-1029