OPTIMIZATION OF IN0.53GA0.47AS REACTIVE ION ETCHING WITH CH4 H-2 USING DESIGN OF EXPERIMENT METHODS/

Optimization of etch depth and anisotropy of In0.53Ga0.47As by CH4/H-2 reactive ion etching is investigated using a central composite experi mental design. Etching characteristics are examined by considering the general trends and main effects of pressure, flow rate, and CH4 conce ntration factors on etch depth and sidewall profile responses. Predict ive models are developed using regression analysis for etch depth and sidewall profile responses. These models can be used to predict with 9 5% confidence etch depth and sidewall profile within approximately 56 nm and 0.16 rad. (C) 1998 American Vacuum Society.