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Results: 1-16 |
Results: 16
TUNABLE, STRONGLY NON PARABOLIC CONFINEMENT IN A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY EPITAXIAL REGROWTH
Authors: CINA S ARNONE DD BURROUGHES JH NORMAN CE BURKE T HUGHES HP PEPPER M RITCHIE DA
Citation: S. Cina et al., TUNABLE, STRONGLY NON PARABOLIC CONFINEMENT IN A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY EPITAXIAL REGROWTH, JPN J A P 1, 37(3B), 1998, pp. 1570-1573
MOBILITY (10(6) CM(2) V-1 S(-1)) OF 2DEGS, 30 NM FROM EX-SITU PATTERNED GAAS REGROWTH INTERFACES
Authors: BURKE TM RITCHIE DA LINFIELD EH OSULLIVAN MP BURROUGHES JH LEADBEATER ML HOLMES SN NORMAN CE SHIELDS AJ
Citation: Tm. Burke et al., MOBILITY (10(6) CM(2) V-1 S(-1)) OF 2DEGS, 30 NM FROM EX-SITU PATTERNED GAAS REGROWTH INTERFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 202-206
USING GPS DATA TO MEASURE SEISMIC MOVEMENT
Authors: NORMAN CE
Citation: Ce. Norman, USING GPS DATA TO MEASURE SEISMIC MOVEMENT, Geotimes, 43(8), 1998, pp. 4-4
A 'NEW HERBALL', PART-1 AND PART-2 AND PART-3 - TURNER,W, CHAPMAN,GTL, TWEDDLE,M, MCCOMBIE,F, WESENCRAFT,AU
Authors: NORMAN CE
Citation: Ce. Norman, A 'NEW HERBALL', PART-1 AND PART-2 AND PART-3 - TURNER,W, CHAPMAN,GTL, TWEDDLE,M, MCCOMBIE,F, WESENCRAFT,AU, The Sixteenth century journal, 28(1), 1997, pp. 211-213
EARLY FRENCH COOKERY - SOURCES, HISTORY, ORIGINAL RECIPES AND MODERN ADAPTATIONS - SCULLY,DE, SCULLY,T
Authors: NORMAN CE
Citation: Ce. Norman, EARLY FRENCH COOKERY - SOURCES, HISTORY, ORIGINAL RECIPES AND MODERN ADAPTATIONS - SCULLY,DE, SCULLY,T, The Sixteenth century journal, 28(1), 1997, pp. 346-348
ELECTRICAL-PROPERTIES OF LATERAL P-N-JUNCTIONS FORMED ON PATTERNED (110)GAAS SUBSTRATES
Authors: GARDNER NR WOODS NJ DOMINGUEZ PS TOK ES NORMAN CE HARRIS JJ
Citation: Nr. Gardner et al., ELECTRICAL-PROPERTIES OF LATERAL P-N-JUNCTIONS FORMED ON PATTERNED (110)GAAS SUBSTRATES, Semiconductor science and technology, 12(6), 1997, pp. 737-741
CHARACTERISTICS OF LATERAL PN JUNCTIONS GROWN ON (100)GAAS PATTERNED SUBSTRATE
Authors: GARDNER NR WOODS NJ DOMINGUEZ PS NORMAN CE HARRIS JJ
Citation: Nr. Gardner et al., CHARACTERISTICS OF LATERAL PN JUNCTIONS GROWN ON (100)GAAS PATTERNED SUBSTRATE, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 315-319
RIGHT THINKING AND SACRED ORATORY IN COUNTERREFORMATION ROME - MCGINNESS,FJ
Authors: NORMAN CE
Citation: Ce. Norman, RIGHT THINKING AND SACRED ORATORY IN COUNTERREFORMATION ROME - MCGINNESS,FJ, The Sixteenth century journal, 27(2), 1996, pp. 591-593
EXTREMELY LOW-THRESHOLD CURRENT-DENSITY INGAAS GAAS/ALGAAS STRAINED SQW LASER GROWN BY MBE WITH AS-2/
Authors: DION M WASILEWSKI ZR CHATENOUD F GUPTA VK PRATT AR WILLIAMS RL NORMAN CE FAHY MR MARINOPOULOU A
Citation: M. Dion et al., EXTREMELY LOW-THRESHOLD CURRENT-DENSITY INGAAS GAAS/ALGAAS STRAINED SQW LASER GROWN BY MBE WITH AS-2/, Canadian journal of physics, 74, 1996, pp. 1-4
UNIFORM INTERMIXING OF QUANTUM-WELLS IN P-I-N MODULATOR STRUCTURES BYIMPURITY FREE VACANCY DIFFUSION
Authors: LYCETT SJ DEWDNEY AJ GHISONI M NORMAN CE MURRAY R SANSOM D ROBERTS JS
Citation: Sj. Lycett et al., UNIFORM INTERMIXING OF QUANTUM-WELLS IN P-I-N MODULATOR STRUCTURES BYIMPURITY FREE VACANCY DIFFUSION, Journal of electronic materials, 24(3), 1995, pp. 197-202
CATHODOLUMINESCENCE OBSERVATIONS OF TRANSFORMATION-INDUCED TOUGHENINGIN MG-PSZ
Authors: LEACH C NORMAN CE
Citation: C. Leach et Ce. Norman, CATHODOLUMINESCENCE OBSERVATIONS OF TRANSFORMATION-INDUCED TOUGHENINGIN MG-PSZ, Journal of Materials Science, 30(11), 1995, pp. 2799-2802
SELECTIVE-AREA BANDGAP MODIFICATION DURING MBE GROWTH OF INGAAS GAAS QUANTUM-WELLS FOR MODE-LOCKED LASER APPLICATIONS/
Authors: NORMAN CE FAHY MR MARINOPOULOU A WILLIAMS RL PRATT AR CHATENOUD F
Citation: Ce. Norman et al., SELECTIVE-AREA BANDGAP MODIFICATION DURING MBE GROWTH OF INGAAS GAAS QUANTUM-WELLS FOR MODE-LOCKED LASER APPLICATIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 299-301
INDIUM MIGRATION CONTROL ON PATTERNED SUBSTRATES FOR OPTOELECTRONIC DEVICE APPLICATIONS
Authors: PRATT AR WILLIAMS RL NORMAN CE FAHY MR MARINOPOULOU A CHATENOUD F
Citation: Ar. Pratt et al., INDIUM MIGRATION CONTROL ON PATTERNED SUBSTRATES FOR OPTOELECTRONIC DEVICE APPLICATIONS, Applied physics letters, 65(8), 1994, pp. 1009-1011
CATHODOLUMINESCENCE FROM INTERMIXED QUANTUM-WELL STRUCTURES - EVIDENCE OF REMOTE LUMINESCENCE
Authors: NORMAN CE GHISONI M
Citation: Ce. Norman et M. Ghisoni, CATHODOLUMINESCENCE FROM INTERMIXED QUANTUM-WELL STRUCTURES - EVIDENCE OF REMOTE LUMINESCENCE, Scanning, 15(6), 1993, pp. 325-330
ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION DETERMINATIONS OF STRAIN RELEASE IN INGAAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: SALVIATI G FERRARI C LAZZARINI L NASI L NORMAN CE BRUNI MR SIMEONE MG MARTELLI F
Citation: G. Salviati et al., ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION DETERMINATIONS OF STRAIN RELEASE IN INGAAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of the Electrochemical Society, 140(8), 1993, pp. 2422-2427
ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION CHARACTERIZATION OF INP GAAS GROWN BY ATOMIC LAYER EPITAXY
Authors: LAZZARINI L FRANZOSI P NORMAN CE SALVIATI G BERTONE D
Citation: L. Lazzarini et al., ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION CHARACTERIZATION OF INP GAAS GROWN BY ATOMIC LAYER EPITAXY, Journal of the Electrochemical Society, 140(6), 1993, pp. 1776-1779
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