Authors: FLEETWOOD DM KOSIER SL NOWLIN RN SCHRIMPF RD REBER RA DELAUS M WINOKUR PS WEI A COMBS WE PEASE RL

Citation: Dm. Fleetwood et al., PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1871-1883

Authors: NOWLIN RN FLEETWOOD DM SCHRIMPF RD

Citation: Rn. Nowlin et al., SATURATION OF THE DOSE-RATE RESPONSE OF BIPOLAR-TRANSISTORS BELOW 10-RAD(SIO2) S - IMPLICATIONS FOR HARDNESS ASSURANCE/, IEEE transactions on nuclear science, 41(6), 1994, pp. 2637-2641

Authors: KOSIER SL SCHRIMPF RD NOWLIN RN FLEETWOOD DM DELAUS M PEASE RL COMBS WE WEI A CHAI F

Citation: Sl. Kosier et al., CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1276-1285

Authors: NOWLIN RN FLEETWOOD DM SCHRIMPF RD PEASE RL COMBS WE

Citation: Rn. Nowlin et al., HARDNESS-ASSURANCE AND TESTING ISSUES FOR BIPOLAR BICMOS DEVICES/, IEEE transactions on nuclear science, 40(6), 1993, pp. 1686-1693