Citation: Mf. Nuban et al., ROOM-TEMPERATURE SCANNING PHOTOLUMINESCENCE FOR MAPPING THE LIFETIME AND THE DOPING DENSITY IN EPITAXIAL LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 125-129
Authors:
NAGY SC
ROBINSON BJ
THOMPSON DA
SIMMONS JG
NUBAN MF
KRAWCZYK SK
BUCHHEIT M
BLANCHET RC
Citation: Sc. Nagy et al., GROWTH OF INGAAS INP STRUCTURES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY ON SIO2-PATTERNED SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS/, Journal of crystal growth, 177(1-2), 1997, pp. 1-5
Authors:
LECLERCQ JL
VIKTOROVITCH P
LETARTRE X
NUBAN MF
GENDRY M
BENYATTOU T
GUILLOT G
FIERLING G
PRIESTER C
Citation: Jl. Leclercq et al., LATERAL BAND-GAP MODULATION BY CONTROLLED ELASTIC RELAXATION OF STRAINED MULTIQUANTUM-WELL STRUCTURES ON INP, Applied physics letters, 67(9), 1995, pp. 1301-1303
Citation: Sk. Krawczyk et Mf. Nuban, ROOM-TEMPERATURE SCANNING PHOTOLUMINESCENCE FOR MAPPING THE LIFETIME AND THE DOPING DENSITY IN COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 452-456