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Results: 1-24 |
Results: 24
Topographic characterization of AFM-grown SiO2 on si
Authors: Blasco, X Hill, D Porti, M Nafria, M Aymerich, X
Citation: X. Blasco et al., Topographic characterization of AFM-grown SiO2 on si, NANOTECHNOL, 12(2), 2001, pp. 110-112
Pre- and post-breakdown switching behaviour in ultrathin SiO2 layers detected by C-AFM
Authors: Porti, M Blasco, X Nafria, M Aymerich, X Olbrich, A Ebersberger, B
Citation: M. Porti et al., Pre- and post-breakdown switching behaviour in ultrathin SiO2 layers detected by C-AFM, NANOTECHNOL, 12(2), 2001, pp. 164-167
Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy
Authors: Porti, M Nafria, M Aymerich, X Olbrich, A Ebersberger, B
Citation: M. Porti et al., Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy, MICROEL ENG, 59(1-4), 2001, pp. 265-269
Two-step stress methodology for monitoring the gate oxide degradation in MOS devices
Authors: Rodriguez, R Miranda, E Nafria, M Sune, J Aymerich, X
Citation: R. Rodriguez et al., Two-step stress methodology for monitoring the gate oxide degradation in MOS devices, SOL ST ELEC, 45(8), 2001, pp. 1317-1325
Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Aymerich, X
Citation: E. Miranda et al., Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides, SOL ST ELEC, 45(8), 2001, pp. 1327-1332
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films
Authors: Rodriguez, R Porti, M Nafria, M Aymerich, X
Citation: R. Rodriguez et al., Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films, MICROEL REL, 41(7), 2001, pp. 1011-1013
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope
Authors: Porti, M Blasco, X Nafria, M Aymerich, X Olbrich, A Ebersberger, B
Citation: M. Porti et al., Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope, MICROEL REL, 41(7), 2001, pp. 1041-1044
Characterising the surface roughness of AFM grown SiO2 on Si
Authors: Hill, D Blasco, X Porti, M Nafria, M Aymerich, X
Citation: D. Hill et al., Characterising the surface roughness of AFM grown SiO2 on Si, MICROEL REL, 41(7), 2001, pp. 1077-1079
Feasibility of the electrical characterization of single SiO2 breakdown spots using C-AFM
Authors: Porti, M Rodriguez, R Nafria, M Aymerich, X Olbrich, A Ebersberger, B
Citation: M. Porti et al., Feasibility of the electrical characterization of single SiO2 breakdown spots using C-AFM, J NON-CRYST, 280(1-3), 2001, pp. 138-142
Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy
Authors: Porti, M Nafria, M Aymerich, X Olbrich, A Ebersberger, B
Citation: M. Porti et al., Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy, APPL PHYS L, 78(26), 2001, pp. 4181-4183
Monitoring the degradation that causes the breakdown of ultrathin (< 5 nm)SiO2 gate oxides
Authors: Rodriguez, R Miranda, E Pau, R Sune, J Nafria, M Aymerich, X
Citation: R. Rodriguez et al., Monitoring the degradation that causes the breakdown of ultrathin (< 5 nm)SiO2 gate oxides, IEEE ELEC D, 21(5), 2000, pp. 251-253
Failure physics of ultra-thin SiO2 gate oxides near their scaling limit
Authors: Sune, J Nafria, M Miranda, E Oriols, X Rodriguez, R Aymerich, X
Citation: J. Sune et al., Failure physics of ultra-thin SiO2 gate oxides near their scaling limit, SEMIC SCI T, 15(5), 2000, pp. 445-454
Conduction properties of breakdown paths in ultrathin gate oxides
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Aymerich, X
Citation: E. Miranda et al., Conduction properties of breakdown paths in ultrathin gate oxides, MICROEL REL, 40(4-5), 2000, pp. 687-690
Relation between defect generation, stress induced leakage current and soft breakdown in thin (< 5 nm) oxides
Authors: Rodriguez, R Miranda, E Pau, R Sune, J Nafria, M Aymerich, X
Citation: R. Rodriguez et al., Relation between defect generation, stress induced leakage current and soft breakdown in thin (< 5 nm) oxides, MICROEL REL, 40(4-5), 2000, pp. 707-710
Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure
Authors: Rodriguez, R Nafria, M Miranda, E Sune, J Aymerich, X
Citation: R. Rodriguez et al., Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure, IEEE DEVICE, 47(11), 2000, pp. 2138-2145
Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Aymerich, X Fonseca, L Campabadal, F
Citation: E. Miranda et al., Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics, IEEE DEVICE, 47(1), 2000, pp. 82-89
Soft breakdown in ultrathin SiO2 layers: The conduction problem from a newpoint of view
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Martin, F Aymerich, X
Citation: E. Miranda et al., Soft breakdown in ultrathin SiO2 layers: The conduction problem from a newpoint of view, JPN J A P 1, 38(4B), 1999, pp. 2223-2226
A new approach to analyze the degradation and breakdown of thin SiO2 filmsunder static and dynamic electrical stress
Authors: Rodriguez, R Nafria, M Miranda, E Sune, J Aymerich, X
Citation: R. Rodriguez et al., A new approach to analyze the degradation and breakdown of thin SiO2 filmsunder static and dynamic electrical stress, IEEE ELEC D, 20(7), 1999, pp. 317-319
A function-fit model for the soft breakdown failure mode
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Aymerich, X
Citation: E. Miranda et al., A function-fit model for the soft breakdown failure mode, IEEE ELEC D, 20(6), 1999, pp. 265-267
A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Aymerich, X
Citation: E. Miranda et al., A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction, MICROEL ENG, 48(1-4), 1999, pp. 171-174
Detection and fitting of the soft breakdown failure mode in MOS structures
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Aymerich, X
Citation: E. Miranda et al., Detection and fitting of the soft breakdown failure mode in MOS structures, SOL ST ELEC, 43(9), 1999, pp. 1801-1805
Model-independent determination of the degradation dynamics of thin SiO2 films
Authors: Rodriguez, R Nafria, M Miranda, E Sune, J Aymerich, X
Citation: R. Rodriguez et al., Model-independent determination of the degradation dynamics of thin SiO2 films, MICROEL REL, 39(6-7), 1999, pp. 891-895
Switching events in the soft breakdown I-t characteristic of ultra-thin SiO2 layers
Authors: Miranda, E Sune, J Rodriguez, R Nafria, M Aymerich, X
Citation: E. Miranda et al., Switching events in the soft breakdown I-t characteristic of ultra-thin SiO2 layers, MICROEL REL, 39(2), 1999, pp. 161-164
Modeling the breakdown spots in silicon dioxide films as point contacts
Authors: Sune, J Miranda, E Nafria, M Aymerich, X
Citation: J. Sune et al., Modeling the breakdown spots in silicon dioxide films as point contacts, APPL PHYS L, 75(7), 1999, pp. 959-961
Risultati: 1-24 |