Authors:
Hashizume, T
Nakasaki, R
Ootomo, S
Oyama, S
Hasegawa, H
Citation: T. Hashizume et al., Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiNx film, IEICE TR EL, E84C(10), 2001, pp. 1455-1461
Authors:
Hashizume, T
Ootomo, S
Nakasaki, R
Oyama, S
Kihara, M
Citation: T. Hashizume et al., X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution, APPL PHYS L, 76(20), 2000, pp. 2880-2882
Citation: K. Yoh et al., Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 1164-1167