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Results: 1-19 |
Results: 19
In inhomogeneity and emission characteristics of InGaN
Authors: Kawakami, Y Omae, K Kaneta, A Okamoto, K Narukawa, Y Mukai, T Fujita, S
Citation: Y. Kawakami et al., In inhomogeneity and emission characteristics of InGaN, J PHYS-COND, 13(32), 2001, pp. 6993-7010
Pump and probe spectroscopy of InGaN multi quantum well based laser diodes
Authors: Kawakami, Y Narukawa, Y Omae, K Nakamura, S Fujita, S
Citation: Y. Kawakami et al., Pump and probe spectroscopy of InGaN multi quantum well based laser diodes, MAT SCI E B, 82(1-3), 2001, pp. 188-193
Effect of supplementation of dry cat food with D,L-methionine and ammoniumchloride on struvite activity product and sediment in urine
Authors: Funaba, M Yamate, T Narukawa, Y Gotoh, K Iriki, T Hatano, Y Abe, M
Citation: M. Funaba et al., Effect of supplementation of dry cat food with D,L-methionine and ammoniumchloride on struvite activity product and sediment in urine, J VET MED S, 63(3), 2001, pp. 337-339
Extension and representation of comonotonically additive functionals
Authors: Narukawa, Y Murofushi, T Sugeno, M
Citation: Y. Narukawa et al., Extension and representation of comonotonically additive functionals, FUZ SET SYS, 121(2), 2001, pp. 217-226
Boundedness and symmetry of comonotonically additive functionals
Authors: Narukawa, Y Murofushi, T Sugeno, M
Citation: Y. Narukawa et al., Boundedness and symmetry of comonotonically additive functionals, FUZ SET SYS, 118(3), 2001, pp. 539-545
Radiative and nonradiative recombination processes in GaN-based semiconductors
Authors: Kawakami, Y Omae, K Kaneta, A Okamoto, K Izumi, T Saijou, S Inoue, K Narukawa, Y Mukai, T Fujita, S
Citation: Y. Kawakami et al., Radiative and nonradiative recombination processes in GaN-based semiconductors, PHYS ST S-A, 183(1), 2001, pp. 41-50
Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order <= 0.55
Authors: Sasaki, A Tsuchida, K Narukawa, Y Kawakami, Y Fujita, S Hsu, Y Stringfellow, GB
Citation: A. Sasaki et al., Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order <= 0.55, J APPL PHYS, 89(1), 2001, pp. 343-347
Two new diterpenoids from Plectranthus nummularius BRIQ.
Authors: Narukawa, Y Shimizu, N Shimotohno, K Takeda, T
Citation: Y. Narukawa et al., Two new diterpenoids from Plectranthus nummularius BRIQ., CHEM PHARM, 49(9), 2001, pp. 1182-1184
Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures
Authors: Mori, J Asahi, H Fudeta, M Noh, JH Watanabe, D Matsuda, S Asami, K Narukawa, Y Kawakami, Y Fujita, S Kaneko, T Gonda, S
Citation: J. Mori et al., Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures, APPL SURF S, 159, 2000, pp. 498-502
Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n <= 4) substrates
Authors: Feng, JM Asai, K Narukawa, Y Kawakami, Y Fujita, S Ohachi, T
Citation: Jm. Feng et al., Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n <= 4) substrates, APPL SURF S, 159, 2000, pp. 532-539
Regular fuzzy measure and representation of comonotonically additive functional
Authors: Narukawa, Y Murofushi, T Sugeno, M
Citation: Y. Narukawa et al., Regular fuzzy measure and representation of comonotonically additive functional, FUZ SET SYS, 112(2), 2000, pp. 177-186
Dimensionality of excitons in InGaN-based light emitting devices
Authors: Kawakami, Y Narukawa, Y Omae, K Fujita, S Nakamura, S
Citation: Y. Kawakami et al., Dimensionality of excitons in InGaN-based light emitting devices, PHYS ST S-A, 178(1), 2000, pp. 331-336
Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
Authors: Izumi, T Narukawa, Y Okamoto, K Kawakami, Y Fujita, S Nakamura, S
Citation: T. Izumi et al., Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution, J LUMINESC, 87-9, 2000, pp. 1196-1198
Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes
Authors: Kawakami, Y Narukawa, Y Omae, K Fujita, S Nakamura, S
Citation: Y. Kawakami et al., Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes, APPL PHYS L, 77(14), 2000, pp. 2151-2153
Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice
Authors: Fudeta, M Asahi, H Asami, K Narukawa, Y Kawakami, Y Noh, JH Mori, J Watanabe, D Fujita, S Gonda, S
Citation: M. Fudeta et al., Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice, JPN J A P 2, 38(9AB), 1999, pp. L1006-L1008
Dimensionality of excitons in laser-diode structures composed of InxGa1-xNmultiple quantum wells
Authors: Narukawa, Y Kawakami, Y Fujita, S Nakamura, S
Citation: Y. Narukawa et al., Dimensionality of excitons in laser-diode structures composed of InxGa1-xNmultiple quantum wells, PHYS REV B, 59(15), 1999, pp. 10283-10288
Recombination dynamics in InxGa1-xN multiple-quantum-well-based laser diodes under high photoexcitation
Authors: Narukawa, Y Kawakami, Y Fujita, S Nakamura, S
Citation: Y. Narukawa et al., Recombination dynamics in InxGa1-xN multiple-quantum-well-based laser diodes under high photoexcitation, PHYS ST S-A, 176(1), 1999, pp. 39-43
Studies on the constituents of Leonotis nepetaefolia
Authors: Takeda, T Narukawa, Y Hada, N
Citation: T. Takeda et al., Studies on the constituents of Leonotis nepetaefolia, CHEM PHARM, 47(2), 1999, pp. 284-286
Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
Authors: Narukawa, Y Saijou, S Kawakami, Y Fujita, S Mukai, T Nakamura, S
Citation: Y. Narukawa et al., Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer, APPL PHYS L, 74(4), 1999, pp. 558-560
Risultati: 1-19 |