Citation: R. Kishore et al., Aluminum-induced crystallization of amorphous silicon (alpha-Si : H) at 150 degrees C, EL SOLID ST, 4(2), 2001, pp. G14-G16
Authors:
Chen, KY
Brown, WD
Schaper, LW
Ang, SS
Naseem, HA
Citation: Ky. Chen et al., A study of the high frequency performance of thin film capacitors for electronic packaging, IEEE T AD P, 23(2), 2000, pp. 293-302
Authors:
Railkar, TA
Kang, WP
Windischmann, H
Malshe, AP
Naseem, HA
Davidson, JL
Brown, WD
Citation: Ta. Railkar et al., A critical review of chemical vapor-deposited (CVD) diamond for electronicapplications, CR R SOLID, 25(3), 2000, pp. 163-277
Authors:
Afonso, S
Schaper, LW
Parkerson, JP
Brown, WD
Ang, SS
Naseem, HA
Citation: S. Afonso et al., Modeling and electrical analysis of seamless high off-chip connectivity (SHOCC) interconnects, IEEE T AD P, 22(3), 1999, pp. 309-320
Citation: Ap. Malshe et al., A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates, DIAM RELAT, 8(7), 1999, pp. 1198-1213
Authors:
Ollison, CD
Brown, WD
Malshe, AP
Naseem, HA
Ang, SS
Citation: Cd. Ollison et al., A comparison of mechanical lapping versus chemical-assisted mechanical polishing and planarization of chemical vapor deposited (CVD) diamond, DIAM RELAT, 8(6), 1999, pp. 1083-1090
Citation: Aa. Shaik et al., Effect of early methane introduction on the properties of nano-seeded MPCVD-diamond films, THIN SOL FI, 356, 1999, pp. 139-145
Authors:
Khalifa, FA
Naseem, HA
Shultz, JL
Brown, WD
Citation: Fa. Khalifa et al., In situ analysis of aluminum enhanced crystallization of hydrogenated amorphous silicon (a-Si : H) using X-ray diffraction, THIN SOL FI, 356, 1999, pp. 343-346