Authors:
Grigull, S
Ishimaru, M
Nastasi, M
Zorman, CA
Mehregany, M
Citation: S. Grigull et al., On the stability of beta-SiC with respect to chemical disorder induced by irradiation with energetic particles, PHIL MAG L, 81(2), 2001, pp. 55-61
Citation: Am. Peters et M. Nastasi, Plasma immersion ion cleaning of oxidized steel surfaces using hexafluoroethane and argon plasmas, J VAC SCI A, 19(6), 2001, pp. 2773-2778
Citation: M. Hakovirta et al., Synthesis of fluorinated diamond-like carbon films by the plasma immersionion processing technique, J VAC SCI A, 19(3), 2001, pp. 782-784
Authors:
Nastasi, M
He, XM
Walter, KC
Hakovirta, M
Trkula, M
Citation: M. Nastasi et al., The use of plasma immersion ion processing in the synthesis of protective coatings for Al die casting, SURF COAT, 136(1-3), 2001, pp. 162-167
Authors:
Verda, RD
Maggiore, CJ
Tesmer, JR
Misra, A
Hoechbauer, T
Nastasi, M
Bower, RW
Citation: Rd. Verda et al., Depth profiling of hydrogen in crystalline silicon using elastic recoil detection analysis, NUCL INST B, 183(3-4), 2001, pp. 401-412
Citation: Am. Peters et al., Annealing of chromium oxycarbide coatings deposited by plasma immersion ion processing (PIIP) for aluminum die casting, NUCL INST B, 175, 2001, pp. 599-604
Citation: A. Misra et M. Nastasi, Intrinsic residual stresses in metal films synthesized by energetic particle deposition, NUCL INST B, 175, 2001, pp. 688-693
Authors:
Hochbauer, T
Misra, A
Nastasi, M
Mayer, JW
Citation: T. Hochbauer et al., Investigation of the cut location in hydrogen implantation induced siliconsurface layer exfoliation, J APPL PHYS, 89(11), 2001, pp. 5980-5990
Authors:
Cornacchia, D
Fabbri, M
Puglisi, A
Moracchini, P
Bernasconi, M
Nastasi, M
Menozzi, C
Mascioli, G
Marotta, T
de Seta, F
Citation: D. Cornacchia et al., Latest generation of unipolar and bipolar steroid eluting leads - Long-term comparison of electrical performance in atrium and ventricles, EUROPACE, 2(3), 2000, pp. 240-244
Citation: Xm. He et al., Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films (vol 12, pg 591, 2000), J PHYS-COND, 12(41), 2000, pp. 8937-8937
Citation: Xm. He et al., Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films, J PHYS-COND, 12(37), 2000, pp. L591-L597
Citation: Xm. He et al., Effects of bonding structure on the properties of plasma immersion ion processed diamondlike carbon films, J MATER RES, 15(2), 2000, pp. 564-571
Authors:
He, XM
Walter, KC
Nastasi, M
Lee, ST
Fung, MK
Citation: Xm. He et al., Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing, J VAC SCI A, 18(5), 2000, pp. 2143-2148
Citation: A. Misra et M. Nastasi, The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films, J VAC SCI A, 18(5), 2000, pp. 2517-2521