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Results: 1-3 |
Results: 3
On the optimum thickness to test dielectric reliability, in an integrated technology of power devices
Authors: Oussalah, S Nebel, F Jerisian, R
Citation: S. Oussalah et al., On the optimum thickness to test dielectric reliability, in an integrated technology of power devices, MICROEL REL, 40(12), 2000, pp. 2047-2051
Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies
Authors: El-Hdiy, A Ziane, D Nebel, F Vuillaume, D Jourdain, M
Citation: A. El-hdiy et al., Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies, J PHYS D, 32(13), 1999, pp. 1435-1442
On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide
Authors: Nebel, F Jourdain, M
Citation: F. Nebel et M. Jourdain, On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide, J NON-CRYST, 245, 1999, pp. 67-72
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