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Results:
1-7
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Results: 7
Authors:
Gwilliam, RM
Knights, AP
Nejim, A
Sealy, BJ
Burrows, CP
Malik, F
Coleman, PG
Citation: Rm. Gwilliam et al., The study of lattice damage using slow positrons following low energy B+ implantation of silicon, NUCL INST B, 175, 2001, pp. 62-67
Authors:
Cowern, NEB
Alquier, D
Omri, M
Claverie, A
Nejim, A
Citation: Neb. Cowern et al., Transient enhanced diffusion in preamorphized silicon: the role of the surface, NUCL INST B, 148(1-4), 1999, pp. 257-261
Authors:
Giles, LF
Omri, M
de Mauduit, B
Claverie, A
Skarlatos, D
Tsoukalas, D
Nejim, A
Citation: Lf. Giles et al., Coarsening of end-of-range defects in ion-implanted silicon annealed in neutral and oxidizing ambients, NUCL INST B, 148(1-4), 1999, pp. 273-278
Authors:
Knights, AP
Nejim, A
Barradas, NP
Coleman, PG
Citation: Ap. Knights et al., Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy, NUCL INST B, 148(1-4), 1999, pp. 340-344
Authors:
Cristiano, F
Nejim, A
Suprun-Belevich, Y
Claverie, A
Hemment, PLF
Citation: F. Cristiano et al., Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys, NUCL INST B, 147(1-4), 1999, pp. 35-42
Authors:
Huda, MQ
Evans-Freeman, JH
Peaker, AR
Houghton, DC
Nejim, A
Citation: Mq. Huda et al., Luminescence from erbium implanted silicon-germanium quantum wells, J VAC SCI B, 16(6), 1998, pp. 2928-2933
Authors:
Malik, F
Coleman, PG
Knights, AP
Gwilliam, R
Nejim, A
Ho, OY
Citation: F. Malik et al., Positron spectroscopy of vacancy-type defects in Si created by 5 keV B+ implantation, J PHYS-COND, 10(46), 1998, pp. 10403-10408
Risultati:
1-7
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