ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

Extreme ultraviolet mask defect simulation: Low-profile defects

Authors: Pistor, T Deng, YF Neureuther, A

Citation: T. Pistor et al., Extreme ultraviolet mask defect simulation: Low-profile defects, J VAC SCI B, 18(6), 2000, pp. 2926-2929

Enhancement of resist resolution and sensitivity via applied electric field

Authors: Cheng, MS Croffie, E Yuan, L Neureuther, A

Citation: Ms. Cheng et al., Enhancement of resist resolution and sensitivity via applied electric field, J VAC SCI B, 18(6), 2000, pp. 3318-3322

Modeling influence of structural changes in photoacid generators an 193 nmsingle layer resist imaging

Authors: Croffie, E Yuan, L Cheng, MS Neureuther, A Houlihan, F Cirelli, R Watson, P Nalamasu, O Gabor, A

Citation: E. Croffie et al., Modeling influence of structural changes in photoacid generators an 193 nmsingle layer resist imaging, J VAC SCI B, 18(6), 2000, pp. 3340-3344

Lithographic performance of thin dendritic polymer resists

Authors: Williamson, M Neureuther, A

Citation: M. Williamson et A. Neureuther, Lithographic performance of thin dendritic polymer resists, J VAC SCI B, 18(6), 2000, pp. 3345-3348

Modeling anomalous depth dependent dissolution effects in chemically amplified resists

Authors: Cheng, MS Tyminski, J Croffie, E Neureuther, A

Citation: Ms. Cheng et al., Modeling anomalous depth dependent dissolution effects in chemically amplified resists, J VAC SCI B, 18(3), 2000, pp. 1294-1298

Overview of the STORM program application to 193nm singe layer resists

Authors: Croffie, E Cheng, M Neureuther, A Cirelli, R Houlihan, F Sweeney, J Watson, P Nalamasu, O Rushkin, I Dimov, O Gabor, A

Citation: E. Croffie et al., Overview of the STORM program application to 193nm singe layer resists, MICROEL ENG, 53(1-4), 2000, pp. 437-442

Extreme ultraviolet mask defect simulation

Authors: Pistor, T Neureuther, A

Citation: T. Pistor et A. Neureuther, Extreme ultraviolet mask defect simulation, J VAC SCI B, 17(6), 1999, pp. 3019-3023

Moving boundary transport model for acid diffusion in chemically amplifiedresists

Authors: Croffie, E Cheng, MS Neureuther, A

Citation: E. Croffie et al., Moving boundary transport model for acid diffusion in chemically amplifiedresists, J VAC SCI B, 17(6), 1999, pp. 3339-3344

Rigorous simulation of mask corner effects in extreme ultraviolet lithography

Authors: Pistor, TV Adam, K Neureuther, A

Citation: Tv. Pistor et al., Rigorous simulation of mask corner effects in extreme ultraviolet lithography, J VAC SCI B, 16(6), 1998, pp. 3449-3455

Shot-noise and edge roughness effects in resists patterned at 10 nm exposure

Authors: Rau, N Stratton, F Fields, C Ogawa, T Neureuther, A Kubena, R Willson, G

Citation: N. Rau et al., Shot-noise and edge roughness effects in resists patterned at 10 nm exposure, J VAC SCI B, 16(6), 1998, pp. 3784-3788

Risultati: 1-10 |