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Results:
1-7
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Results: 7
Authors:
Misiuk, A
Bak-Misiuk, J
Antonova, IV
Raineri, V
Romano-Rodriguez, A
Bachrouri, A
Surma, HB
Ratajczak, J
Katcki, J
Adamczewska, J
Neustroev, EP
Citation: A. Misiuk et al., Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen, COMP MAT SC, 21(4), 2001, pp. 515-525
Authors:
Stas', VF
Antonova, IV
Neustroev, EP
Popov, VP
Smirnov, LS
Citation: Vf. Stas' et al., Thermal acceptors in irradiated silicon, SEMICONDUCT, 34(2), 2000, pp. 155-160
Authors:
Neustroev, EP
Antonova, IV
Popov, VP
Kilanov, DV
Misiuk, A
Citation: Ep. Neustroev et al., Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures, PHYSICA B, 293(1-2), 2000, pp. 44-48
Authors:
Neustroev, EP
Antonova, IV
Popov, VP
Stas, VF
Skuratov, VA
Didyk, AY
Citation: Ep. Neustroev et al., Thermal donor formation in crystalline silicon irradiated by high energy ions, NUCL INST B, 171(4), 2000, pp. 443-447
Authors:
Antonova, IV
Popov, VP
Kilanov, DV
Neustroev, EP
Misuk, A
Citation: Iv. Antonova et al., Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment, SEMICONDUCT, 33(10), 1999, pp. 1049-1053
Authors:
Neustroev, EP
Antonova, IV
Stas, VF
Popov, VP
Obodnikov, VI
Citation: Ep. Neustroev et al., Donor center formation in hydrogen implanted silicon, PHYSICA B, 270(1-2), 1999, pp. 1-5
Authors:
Neustroev, EP
Antonova, IV
Obodnikov, VI
Popov, VP
Skuratov, VA
Smagulova, SA
Didyk, AY
Citation: Ep. Neustroev et al., Impact of high energy ion implantation on dopant distribution in silicon, NUCL INST B, 146(1-4), 1998, pp. 323-328
Risultati:
1-7
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