AAAAAA
Results: 26-50/54
Authors:
Krupenin, VA
Presnov, DE
Zorin, AB
Niemeyer, J
Citation: Va. Krupenin et al., A very low-noise single-electron electrometer of stacked-junction geometry, PHYSICA B, 284, 2000, pp. 1800-1801
Authors:
Scherer, H
Weimann, T
Hinze, P
Samwer, PW
Zorin, AB
Niemeyer, J
Citation: H. Scherer et al., All-chromium single-electron tunneling devices fabricated by direct-writing multilayer technique, PHYSICA B, 284, 2000, pp. 1806-1807
Authors:
Lotkhov, SV
Zangerle, H
Zorin, AB
Niemeyer, J
Citation: Sv. Lotkhov et al., Fewer-junction single-electron trap with an ohmic resistor, PHYSICA B, 280(1-4), 2000, pp. 403-404
Authors:
Weimann, T
Scherer, H
Hinze, P
Niemeyer, J
Citation: T. Weimann et al., Fabrication of metallic multilayer single electron tunneling devices usinglow-energy e-beam lithography, MICROEL ENG, 53(1-4), 2000, pp. 225-228
Authors:
Gotz, M
Grajcar, M
Il'ichev, E
Khanin, VV
Zorin, AB
Niemeyer, J
Meyer, HG
Citation: M. Gotz et al., Supercurrent-phase relation of an Nb/AlOx/Al/AlOx/Nb-based Josephson junction at the superconducting transition of the Al interlayer, PHYS REV B, 62(22), 2000, pp. R14645-R14648
Authors:
Krupenin, VA
Presnov, DE
Zorin, AB
Niemeyer, J
Citation: Va. Krupenin et al., Aluminum single electron transistors with islands isolated from the substrate, J L TEMP PH, 118(5-6), 2000, pp. 287-296
Authors:
Zorin, AB
Lotkhov, SV
Zangerle, H
Niemeyer, J
Citation: Ab. Zorin et al., Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: Towards the implementation of the R pump, J APPL PHYS, 88(5), 2000, pp. 2665-2670
Authors:
Gotz, M
Khanin, VV
Schulze, H
Zorin, AB
Niemeyer, J
Il'ichev, E
Chwala, A
Hoenig, HE
Meyer, HG
Citation: M. Gotz et al., Harmonic current-phase relation in Nb-Al-based superconductor/insulator/normal conductor/insulator/superconductor-type Josephson junctions between 4.2 K and the critical temperature, APPL PHYS L, 77(9), 2000, pp. 1354-1356
Authors:
Pavolotsky, AB
Weimann, T
Scherer, H
Krupenin, VA
Niemeyer, J
Zorin, AB
Citation: Ab. Pavolotsky et al., Multilayer technique for fabricating Nb junction circuits exhibiting charging effects, J VAC SCI B, 17(1), 1999, pp. 230-232
Authors:
Khabipov, MI
Balashov, DV
Buchholz, FI
Kessel, W
Niemeyer, J
Citation: Mi. Khabipov et al., RSFQ circuitry realized in a SINIS technology process, IEEE APPL S, 9(4), 1999, pp. 4682-4687
Authors:
Pavolotsky, AB
Weimann, T
Scherer, H
Niemeyer, J
Zorin, AB
Krupenin, VA
Citation: Ab. Pavolotsky et al., Novel method for fabricating deep submicron Nb/AlOx/Nb tunnel junctions based on spin-on glass planarization, IEEE APPL S, 9(2), 1999, pp. 3251-3254
Authors:
Dolata, R
Weimann, T
Scherer, HJ
Niemeyer, J
Citation: R. Dolata et al., Sub mu m Nb/AlOx/Nb Josephson junctions fabricated by anodization techniques, IEEE APPL S, 9(2), 1999, pp. 3255-3258
Authors:
Lotkhov, SV
Zangerle, H
Zorin, AB
Weimann, T
Scherer, H
Niemeyer, J
Citation: Sv. Lotkhov et al., Superconducting electrometer based on the resistively shunted Bloch transistor, IEEE APPL S, 9(2), 1999, pp. 3664-3667
Authors:
Meyer, HG
Wende, G
Fritzsch, L
Thrum, F
Schubert, M
Muller, F
Behr, R
Niemeyer, J
Citation: Hg. Meyer et al., Improved primary Josephson voltage standard with a new microwave driving source, IEEE APPL S, 9(2), 1999, pp. 4150-4153
Authors:
Schulze, H
Muller, F
Behr, R
Kohlmann, J
Niemeyer, J
Balashov, D
Citation: H. Schulze et al., SINIS Josephson junctions for programmable Josephson voltage standard circuits, IEEE APPL S, 9(2), 1999, pp. 4241-4244
Authors:
Balashov, D
Khabipov, MI
Buchholz, FI
Kessel, W
Niemeyer, J
Citation: D. Balashov et al., SINIS fabrication process for realizing integrated circuits in RSFQ impulse logic, SUPERCOND S, 12(11), 1999, pp. 864-867
Authors:
Karger, B
Niemeyer, J
Brinkmann, B
Citation: B. Karger et al., Physical activity following fatal injury from sharp pointed weapons, INT J LEGAL, 112(3), 1999, pp. 188-191
Authors:
Zorin, AB
Lotkhov, SV
Pashkin, YA
Zangerle, H
Krupenin, VA
Weimann, T
Scherer, H
Niemeyer, J
Citation: Ab. Zorin et al., Highly sensitive electrometers based on single Cooper pair tunneling, J SUPERCOND, 12(6), 1999, pp. 747-755
Authors:
Cirillo, M
Mueller, F
Niemeyer, J
Poepel, R
Citation: M. Cirillo et al., Coupling of Josephson radiation to voltage standard arrays, J SUPERCOND, 12(5), 1999, pp. 617-621
Authors:
Niemeyer, J
Machulla, G
Citation: J. Niemeyer et G. Machulla, Description of soil pore systems accessible for water by fractal dimensions, PHYSICA A, 266(1-4), 1999, pp. 203-208
Authors:
Weimann, T
Hinze, P
Scherer, H
Niemeyer, J
Citation: T. Weimann et al., Fabrication of a metallic single electron tunneling transistor by multilayer technique using lithography with a scanning transmission electron microscope, MICROEL ENG, 46(1-4), 1999, pp. 165-168
Authors:
Krupenin, VA
Lotkhov, SV
Scherer, H
Weimann, T
Zorin, AB
Ahlers, FJ
Niemeyer, J
Wolf, H
Citation: Va. Krupenin et al., Charging and heating effects in a system of coupled single-electron tunneling devices, PHYS REV B, 59(16), 1999, pp. 10778-10784
Authors:
Katkov, A
Niemeyer, J
Behr, R
Citation: A. Katkov et al., Possible direct measurement of standard cells with a Josephson voltage standard, METROLOGIA, 36(5), 1999, pp. 473-476
Authors:
Scherer, H
Weimann, T
Hinze, P
Samwer, BW
Zorin, AB
Niemeyer, J
Citation: H. Scherer et al., Characterization of all-chromium tunnel junctions and single-electron tunneling devices fabricated by direct-writing multilayer technique, J APPL PHYS, 86(12), 1999, pp. 6956-6964
Authors:
Behr, R
Schulze, H
Muller, F
Kohlmann, J
Niemeyer, J
Citation: R. Behr et al., Josephson arrays at 70 GHz for conventional and programmable voltage standards, IEEE INSTR, 48(2), 1999, pp. 270-273