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Authors: Kipshidze, G Nikishin, S Kuryatkov, V Choi, K Gherasoiu, I Prokofyeva, T Holtz, M Temkin, H Hobart, KD Kub, FJ Fatemi, M

Citation: G. Kipshidze et al., High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 825-828

Authors: Deelman, PW Bicknell-Tassius, RN Nikishin, S Kuryatkov, V Temkin, H

Citation: Pw. Deelman et al., Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy, APPL PHYS L, 78(15), 2001, pp. 2172-2174

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Citation: Y. Kudriavtsev et al., SIMS study of GaAsN/GaAs multiple quantum wells, SURF INT AN, 29(6), 2000, pp. 399-402