Authors: Ohuchi, K Adachi, K Murakoshi, A Hokazono, A Kanemura, T Aoki, N Nishigohri, M Suguro, K Toyoshima, Y

Citation: K. Ohuchi et al., Ultrashallow junction formation for sub-100 nm complementary metal-oxide-semiconductor field-effect transistor by controlling transient enhanced diffusion, JPN J A P 1, 40(4B), 2001, pp. 2701-2705