Authors:
Ohuchi, K
Adachi, K
Murakoshi, A
Hokazono, A
Kanemura, T
Aoki, N
Nishigohri, M
Suguro, K
Toyoshima, Y
Citation: K. Ohuchi et al., Ultrashallow junction formation for sub-100 nm complementary metal-oxide-semiconductor field-effect transistor by controlling transient enhanced diffusion, JPN J A P 1, 40(4B), 2001, pp. 2701-2705