Authors: Katayama-Yoshida, H Nishimatsu, T Yamamoto, T Orita, N

Citation: H. Katayama-yoshida et al., Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment, J PHYS-COND, 13(40), 2001, pp. 8901-8914

Authors: Nishimatsu, T Katayama-Yoshida, H Orita, N

Citation: T. Nishimatsu et al., Theoretical study of hydrogen-related complexes in diamond for low-resistive n-type diamond semiconductor, PHYSICA B, 302, 2001, pp. 149-154

Authors: Toba, E Kazama, J Tanaka, H Nishimatsu, T Aizawa, H Ishizawa, H

Citation: E. Toba et al., Fiber optic fluorosensor for oxygen measurement, IEICE TR EL, E83C(3), 2000, pp. 366-370

Authors: Katayama-Yoshida, H Nishimatsu, T Yamamoto, T Orita, N

Citation: H. Katayama-yoshida et al., Comparison between the theoretical prediction of codoping and the recent experimental evidences in p-type GaN, AlN, ZnSe, CuInS2 and n-type diamond, PHYS ST S-B, 210(2), 1998, pp. 429-436