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Results: 1-12 |
Results: 12

Authors: Tada, K Arakawa, T Kazuma, K Kurosawa, N Noh, JH
Citation: K. Tada et al., Influence of one monolay er thickness variation in GaAs/AlGaAs five-layer asymmetric coupled quantum well upon electrorefractive index change, JPN J A P 1, 40(2A), 2001, pp. 656-661

Authors: Kim, CW Song, JS Ahn, YS Park, SH Park, JW Noh, JH Hong, CS
Citation: Cw. Kim et al., Occupational asthma due to formaldehyde, YONSEI MED, 42(4), 2001, pp. 440-445

Authors: Mori, J Asahi, H Noh, JH Fudeta, M Watanabe, D Matsuda, S Asami, K Seki, S Matsui, Y Tagawa, S Gonda, S
Citation: J. Mori et al., Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy, J CRYST GR, 227, 2001, pp. 1095-1099

Authors: Watanabe, D Asahi, H Noh, JH Fudeta, M Mori, J Matsuda, S Asami, K Gonda, S
Citation: D. Watanabe et al., Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A, JPN J A P 1, 39(7B), 2000, pp. 4601-4603

Authors: Arakawa, T Tada, K Kurosawa, N Noh, JH
Citation: T. Arakawa et al., Anomalous sharp dip of large field-induced refractive index change in GaAs/AlGaAs five-layer asymmetric coupled quantum well, JPN J A P 1, 39(11), 2000, pp. 6329-6333

Authors: Gonda, S Asahi, H Mori, J Watanabe, D Matsuda, S Noh, JH Fudeta, M Asami, K Seki, S Matsui, Y Tagawa, S
Citation: S. Gonda et al., Structural and optical characterization of self-formed GaP/InP quantum dots, J ELEC MAT, 29(5), 2000, pp. 530-534

Authors: Mori, J Asahi, H Fudeta, M Noh, JH Watanabe, D Matsuda, S Asami, K Narukawa, Y Kawakami, Y Fujita, S Kaneko, T Gonda, S
Citation: J. Mori et al., Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures, APPL SURF S, 159, 2000, pp. 498-502

Authors: Noh, JH Asahi, H Fudeta, M Watanabe, D Mori, J Gonda, S
Citation: Jh. Noh et al., Growth temperature dependence of self-formation process of quantum dot structures in GaP/InP short-period superlattices grown on GaAs (311)A substrate, JPN J A P 1, 38(4B), 1999, pp. 2521-2523

Authors: Fudeta, M Asahi, H Kim, SJ Noh, JH Asami, K Gonda, S
Citation: M. Fudeta et al., Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices, JPN J A P 1, 38(2B), 1999, pp. 1078-1080

Authors: Fudeta, M Asahi, H Asami, K Narukawa, Y Kawakami, Y Noh, JH Mori, J Watanabe, D Fujita, S Gonda, S
Citation: M. Fudeta et al., Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice, JPN J A P 2, 38(9AB), 1999, pp. L1006-L1008

Authors: Ghosh, S Arora, BM Kim, SJ Noh, JH Asahi, H
Citation: S. Ghosh et al., Spectroscopic study of Ga-In-P based self-organized lateral superlattices, SEMIC SCI T, 14(3), 1999, pp. 239-245

Authors: Ghosh, S Arora, BM Kim, SJ Noh, JH Asahi, H
Citation: S. Ghosh et al., Spectroscopic study of self-organized quantum dot like structures in Ga-In-P superlattices on (311) GaAs, J APPL PHYS, 85(5), 1999, pp. 2687-2693
Risultati: 1-12 |