Authors:
Tada, K
Arakawa, T
Kazuma, K
Kurosawa, N
Noh, JH
Citation: K. Tada et al., Influence of one monolay er thickness variation in GaAs/AlGaAs five-layer asymmetric coupled quantum well upon electrorefractive index change, JPN J A P 1, 40(2A), 2001, pp. 656-661
Authors:
Mori, J
Asahi, H
Noh, JH
Fudeta, M
Watanabe, D
Matsuda, S
Asami, K
Seki, S
Matsui, Y
Tagawa, S
Gonda, S
Citation: J. Mori et al., Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy, J CRYST GR, 227, 2001, pp. 1095-1099
Authors:
Watanabe, D
Asahi, H
Noh, JH
Fudeta, M
Mori, J
Matsuda, S
Asami, K
Gonda, S
Citation: D. Watanabe et al., Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A, JPN J A P 1, 39(7B), 2000, pp. 4601-4603
Citation: T. Arakawa et al., Anomalous sharp dip of large field-induced refractive index change in GaAs/AlGaAs five-layer asymmetric coupled quantum well, JPN J A P 1, 39(11), 2000, pp. 6329-6333
Authors:
Mori, J
Asahi, H
Fudeta, M
Noh, JH
Watanabe, D
Matsuda, S
Asami, K
Narukawa, Y
Kawakami, Y
Fujita, S
Kaneko, T
Gonda, S
Citation: J. Mori et al., Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures, APPL SURF S, 159, 2000, pp. 498-502
Authors:
Noh, JH
Asahi, H
Fudeta, M
Watanabe, D
Mori, J
Gonda, S
Citation: Jh. Noh et al., Growth temperature dependence of self-formation process of quantum dot structures in GaP/InP short-period superlattices grown on GaAs (311)A substrate, JPN J A P 1, 38(4B), 1999, pp. 2521-2523
Authors:
Fudeta, M
Asahi, H
Kim, SJ
Noh, JH
Asami, K
Gonda, S
Citation: M. Fudeta et al., Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices, JPN J A P 1, 38(2B), 1999, pp. 1078-1080
Authors:
Fudeta, M
Asahi, H
Asami, K
Narukawa, Y
Kawakami, Y
Noh, JH
Mori, J
Watanabe, D
Fujita, S
Gonda, S
Citation: M. Fudeta et al., Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice, JPN J A P 2, 38(9AB), 1999, pp. L1006-L1008
Authors:
Ghosh, S
Arora, BM
Kim, SJ
Noh, JH
Asahi, H
Citation: S. Ghosh et al., Spectroscopic study of self-organized quantum dot like structures in Ga-In-P superlattices on (311) GaAs, J APPL PHYS, 85(5), 1999, pp. 2687-2693