Authors: Stesmans, A Nouwen, B Iakoubovskii, K

Citation: A. Stesmans et al., Electron spin resonance characterization of a divacancy-related centre in CVD diamond, J PHYS-COND, 12(35), 2000, pp. 7807-7817

Authors: Nouwen, B Stesmans, A

Citation: B. Nouwen et A. Stesmans, Dependence of strain at the (111)Si/SiO2 interface on interfacial Si dangling-bond concentration, MAT SCI E A, 288(2), 2000, pp. 239-243

Authors: Iakoubovskii, K Stesmans, A Nouwen, B Adriaenssens, GJ

Citation: K. Iakoubovskii et al., ESR and optical evidence for a Ni vacancy center in CVD diamond, PHYS REV B, 62(24), 2000, pp. 16587-16594

Authors: Stesmans, A Nouwen, B

Citation: A. Stesmans et B. Nouwen, Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface, PHYS REV B, 61(23), 2000, pp. 16068-16076

Authors: Stesmans, A Nouwen, B

Citation: A. Stesmans et B. Nouwen, Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface, MAT SCI E B, 58(1-2), 1999, pp. 52-55

Authors: Stesmans, A Nouwen, B Afanas'ev, VV

Citation: A. Stesmans et al., P-b1 interface defect in thermal (100)Si/SiO2: Si-29 hyperfine interaction, PHYS REV B, 58(23), 1998, pp. 15801-15809