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Results: 1-13 |
Results: 13
Determination of processing damage in thin polycrystalline Ir films using Bragg-peak fringe analysis
Authors: Saenger, KL Noyan, IC
Citation: Kl. Saenger et Ic. Noyan, Determination of processing damage in thin polycrystalline Ir films using Bragg-peak fringe analysis, J APPL PHYS, 89(6), 2001, pp. 3125-3131
Quantitative metrology study of Cu/SiO2 interconnect structures using fluorescence x-ray microscopy
Authors: Xu, GY Su, X Stagarescu, CB Eastman, DE Lai, B Cai, Z Noyan, IC Hu, CK
Citation: Gy. Xu et al., Quantitative metrology study of Cu/SiO2 interconnect structures using fluorescence x-ray microscopy, APPL PHYS L, 78(6), 2001, pp. 820-822
Real-time x-ray microbeam characterization of electromigration effects in Al(Cu) wires
Authors: Wang, PC Noyan, IC Kaldor, SK Jordan-Sweet, JL Liniger, EG Hu, CK
Citation: Pc. Wang et al., Real-time x-ray microbeam characterization of electromigration effects in Al(Cu) wires, APPL PHYS L, 78(18), 2001, pp. 2712-2714
Divergence effects in monochromatic x-ray microdiffraction using tapered capillary optics
Authors: Noyan, IC Wang, PC Kaldor, SK Jordan-Sweet, JL Liniger, EG
Citation: Ic. Noyan et al., Divergence effects in monochromatic x-ray microdiffraction using tapered capillary optics, REV SCI INS, 71(5), 2000, pp. 1991-2000
Quantitative nanoscale metrology study of Cu/SiO2 interconnect technology using transmission x-ray microscopy
Authors: Su, X Stagarescu, C Xu, G Eastman, DE McNulty, I Frigo, SP Wang, YX Retsch, CC Noyan, IC Hu, CK
Citation: X. Su et al., Quantitative nanoscale metrology study of Cu/SiO2 interconnect technology using transmission x-ray microscopy, APPL PHYS L, 77(21), 2000, pp. 3465-3467
Topographic measurement of electromigration-induced stress gradients in aluminum conductor lines
Authors: Wang, PC Noyan, IC Kaldor, SK Jordan-Sweet, JL Liniger, EG Hu, CK
Citation: Pc. Wang et al., Topographic measurement of electromigration-induced stress gradients in aluminum conductor lines, APPL PHYS L, 76(25), 2000, pp. 3726-3728
Semiconductors: Integrated circuit manufacture
Authors: Goldsmith, CC Noyan, IC De Haven, P Nunes, TL
Citation: Cc. Goldsmith et al., Semiconductors: Integrated circuit manufacture, INDUSTRIAL APPLICATIONS OF X-RAY DIFFRACTION, 2000, pp. 55-88
A modified Voigt method for calculation of the elastic constants of ensembles selected by diffraction methods
Authors: Murray, CE Noyan, IC
Citation: Ce. Murray et Ic. Noyan, A modified Voigt method for calculation of the elastic constants of ensembles selected by diffraction methods, PHIL MAG A, 79(2), 1999, pp. 371-389
Images of local tilted regions in strain-relaxed SiGe layers
Authors: Mooney, PM Jordan-Sweet, JL Noyan, IC Kaldor, SK Wang, PC
Citation: Pm. Mooney et al., Images of local tilted regions in strain-relaxed SiGe layers, PHYSICA B, 274, 1999, pp. 608-611
A cost-effective method for minimizing the sphere-of-confusion error of x-ray microdiffractometers
Authors: Noyan, IC Kaldor, SK Wang, PC Jordan-Sweet, J
Citation: Ic. Noyan et al., A cost-effective method for minimizing the sphere-of-confusion error of x-ray microdiffractometers, REV SCI INS, 70(2), 1999, pp. 1300-1304
Mechanisms for microstructure evolution in electroplated copper thin filmsnear room temperature
Authors: Harper, JME Cabral, C Andricacos, PC Gignac, L Noyan, IC Rodbell, KP Hu, CK
Citation: Jme. Harper et al., Mechanisms for microstructure evolution in electroplated copper thin filmsnear room temperature, J APPL PHYS, 86(5), 1999, pp. 2516-2525
Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction
Authors: Mooney, PM Jordan-Sweet, JL Noyan, IC Kaldor, SK Wang, PC
Citation: Pm. Mooney et al., Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction, APPL PHYS L, 74(5), 1999, pp. 726-728
Deformation field in single-crystal fields semiconductor substrates causedby metallization features
Authors: Noyan, IC Wang, PC Kaldor, SK Jordan-Sweet, JL
Citation: Ic. Noyan et al., Deformation field in single-crystal fields semiconductor substrates causedby metallization features, APPL PHYS L, 74(16), 1999, pp. 2352-2354
Risultati: 1-13 |