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Results:
1-11
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Results: 11
Authors:
Turan, R
Aslan, B
Nur, O
Yousif, MYA
Willander, M
Citation: R. Turan et al., Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction, APPL PHYS A, 72(5), 2001, pp. 587-593
Authors:
Mamor, M
Fu, Y
Nur, O
Willander, M
Bengtsson, S
Citation: M. Mamor et al., Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor, APPL PHYS A, 72(5), 2001, pp. 633-637
Authors:
Ouacha, H
Nur, O
Fu, Y
Willander, M
Ouacha, A
Turan, R
Citation: H. Ouacha et al., Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction, SEMIC SCI T, 16(4), 2001, pp. 255-259
Authors:
Yousif, MYA
Nur, O
Willander, M
Patel, CJ
Hernandez, C
Campidelli, Y
Bensahel, D
Kyutt, RN
Citation: Mya. Yousif et al., Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers, SOL ST ELEC, 45(11), 2001, pp. 1869-1874
Authors:
Myrberg, T
Jacob, AP
Nur, O
Zhao, QX
Willander, M
DeBoer, WB
Citation: T. Myrberg et al., Relaxation and photoluminscence of different post-processed Si/Si1-xGex quantum well structures grown by CVD, SOL ST ELEC, 45(11), 2001, pp. 1915-1919
Authors:
Yousif, MYA
Nur, O
Willander, M
Citation: Mya. Yousif et al., Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices, SOL ST ELEC, 45(11), 2001, pp. 1931-1937
Authors:
Nur, O
Karlsteen, M
Sodervall, U
Willander, M
Patel, CJ
Hernandez, C
Campidelli, Y
Bensahel, D
Kyutt, RN
Citation: O. Nur et al., Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping, SEMIC SCI T, 15(7), 2000, pp. L25-L30
Authors:
Yousif, MYA
Chretien, O
Nur, O
Willander, M
Citation: Mya. Yousif et al., Short-channel effects in Si/Si1-xGex retrograde double quantum well p-MOSFETs, SOL ST ELEC, 43(5), 1999, pp. 969-976
Authors:
Mamor, M
Nur, O
Karlsteen, M
Willander, M
Auret, FD
Citation: M. Mamor et al., Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1-xGex layers, J APPL PHYS, 86(12), 1999, pp. 6890-6894
Authors:
Kuznetsov, AY
Svensson, BG
Nur, O
Hultman, L
Citation: Ay. Kuznetsov et al., Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon, J APPL PHYS, 84(12), 1998, pp. 6644-6649
Authors:
Nur, O
Karlsteen, M
Willander, M
Turan, R
Aslan, B
Tanner, MO
Wang, KL
Citation: O. Nur et al., Correlation between barrier height and band offsets in metal/Si1-xGex/Si heterostructures, APPL PHYS L, 73(26), 1998, pp. 3920-3922
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1-11
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