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Results: 1-10 |
Results: 10
PLASMA CLEANING AND NITRIDATION OF SAPPHIRE SUBSTRATES FOR ALXGA1-XN EPITAXY AS STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION
Authors: SEELMANNEGGEBERT M ZIMMERMANN H OBLOH H NIEBUHR R WACHTENDORF B
Citation: M. Seelmanneggebert et al., PLASMA CLEANING AND NITRIDATION OF SAPPHIRE SUBSTRATES FOR ALXGA1-XN EPITAXY AS STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2008-2015
EVIDENCE FOR COMPOSITIONAL INHOMOGENEITY IN LOW IN CONTENT (INGA)N OBTAINED BY RESONANT RAMAN-SCATTERING
Authors: BEHR D WAGNER J RAMAKRISHNAN A OBLOH H BACHEM KH
Citation: D. Behr et al., EVIDENCE FOR COMPOSITIONAL INHOMOGENEITY IN LOW IN CONTENT (INGA)N OBTAINED BY RESONANT RAMAN-SCATTERING, Applied physics letters, 73(2), 1998, pp. 241-243
SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF (INGA)N ON GAN
Authors: WAGNER J RAMAKRISHNAN A BEHR D OBLOH H KUNZER M BACHEM KH
Citation: J. Wagner et al., SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF (INGA)N ON GAN, Applied physics letters, 73(12), 1998, pp. 1715-1717
NATURE OF THE 2.8 EV PHOTOLUMINESCENCE BAND IN MG DOPED GAN
Authors: KAUFMANN U KUNZER M MAIER M OBLOH H RAMAKRISHNAN A SANTIC B SCHLOTTER P
Citation: U. Kaufmann et al., NATURE OF THE 2.8 EV PHOTOLUMINESCENCE BAND IN MG DOPED GAN, Applied physics letters, 72(11), 1998, pp. 1326-1328
ORIGIN OF THE Q = 11 MEV BOUND EXCITON IN GAN
Authors: KAUFMANN U MERZ C SANTIC B NIEBUHR R OBLOH H BACHEM KH
Citation: U. Kaufmann et al., ORIGIN OF THE Q = 11 MEV BOUND EXCITON IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 109-112
POLARITY OF (00.1)GAN EPILAYERS GROWN ON A (00.1)SAPPHIRE
Authors: SEELMANNEGGEBERT M WEYHER JL OBLOH H ZIMMERMANN H RAR A POROWSKI S
Citation: M. Seelmanneggebert et al., POLARITY OF (00.1)GAN EPILAYERS GROWN ON A (00.1)SAPPHIRE, Applied physics letters, 71(18), 1997, pp. 2635-2637
IONIZED DONOR BOUND EXCITONS IN GAN
Authors: SANTIC B MERZ C KAUFMANN U NIEBUHR R OBLOH H BACHEM K
Citation: B. Santic et al., IONIZED DONOR BOUND EXCITONS IN GAN, Applied physics letters, 71(13), 1997, pp. 1837-1839
COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF ALSB(AS) TUNNELING BARRIERS IN INAS ALSB(AS)/GASB RESONANT INTERBAND-TUNNELING STRUCTURES/
Authors: WAGNER J SCHMITZ J OBLOH H KOIDL P
Citation: J. Wagner et al., COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF ALSB(AS) TUNNELING BARRIERS IN INAS ALSB(AS)/GASB RESONANT INTERBAND-TUNNELING STRUCTURES/, Applied physics letters, 67(20), 1995, pp. 2963-2965
UNINTENTIONAL AS INCORPORATION IN MOLECULAR-BEAM EPITAXIALLY GROWN INAS ALSB/GASB HETEROSTRUCTURES/
Authors: SCHMITZ J WAGNER J MAIER M OBLOH H KOIDL P RALSTON JD
Citation: J. Schmitz et al., UNINTENTIONAL AS INCORPORATION IN MOLECULAR-BEAM EPITAXIALLY GROWN INAS ALSB/GASB HETEROSTRUCTURES/, Journal of electronic materials, 23(11), 1994, pp. 1203-1207
PHOTOLUMINESCENCE OF INAS ALSB SINGLE QUANTUM-WELLS/
Authors: FUCHS F SCHMITZ J OBLOH H RALSTON JD KOIDL P
Citation: F. Fuchs et al., PHOTOLUMINESCENCE OF INAS ALSB SINGLE QUANTUM-WELLS/, Applied physics letters, 64(13), 1994, pp. 1665-1667
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