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Citation: F. Boussaid et al., ELECTRICALLY ACTIVE DEFECTS IN BF2+ IMPLANTED AND GERMANIUM PREAMORPHIZED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(2), 1998, pp. 195-201

Authors: BENZOHRA M OLIVIE F BOUSSAID F ALQUIER D MARTINEZ A

Citation: M. Benzohra et al., ELECTRONIC DEFECT LEVELS IN ULTRA-SHALLOW P(-JUNCTIONS FORMED BY LOW-ENERGY B-ION-IMPLANTATION INTO GE-PREAMORPHIZED SILICON()N), JPN J A P 1, 36(7A), 1997, pp. 4346-4350

Authors: BOYER PT OLIVIE F KASSMI K SCHEID E SARRABAYROUSE G MARTINEZ A

Citation: Pt. Boyer et al., ELECTRICAL CHARACTERISTICS OF THIN SILICA LAYERS NITRIDED BY LPCVD NITROGEN-DOPED SILICON, Solid-state electronics, 41(7), 1997, pp. 951-955