ELECTRICAL CHARACTERISTICS OF THIN SILICA LAYERS NITRIDED BY LPCVD NITROGEN-DOPED SILICON

Authors
BOYER PT OLIVIE F KASSMI K SCHEID E SARRABAYROUSE G MARTINEZ A
Citation
Pt. Boyer et al., ELECTRICAL CHARACTERISTICS OF THIN SILICA LAYERS NITRIDED BY LPCVD NITROGEN-DOPED SILICON, Solid-state electronics, 41(7), 1997, pp. 951-955
Citations number
33
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
7
Year of publication
1997
Pages
951 - 955
Database
ISI
SICI code
0038-1101(1997)41:7<951:ECOTSL>2.0.ZU;2-B
Abstract
This article reports on a new method to obtain nitrided silica layers. Nitridation is caused by the incorporation of nitrogen atoms into the insulator from a nitrogen doped polysilicon overlayer. Details about the process and improvements of the main electrical characteristics of a metal-oxide-silicon structure are given. (C) 1997 Elsevier Science Ltd.