Authors:
CRISTIANO F
BONAFOS C
NEJIM A
LOMBARDO S
OMRI M
ALQUIER D
MARTINEZ A
CAMPISANO SU
HEMMENT PLF
CLAVERIE A
Citation: F. Cristiano et al., INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON ), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 22-26
Authors:
BONAFOS C
OMRI M
DEMAUDUIT B
BENASSAYAG G
CLAVERIE A
ALQUIER D
MARTINEZ A
MATHIOT D
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS, Journal of applied physics, 82(6), 1997, pp. 2855-2861
Authors:
OMRI M
BONAFOS C
CLAVERIE A
NEJIM A
CRISTIANO F
ALQUIER D
MARTINEZ A
COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8