Authors: LING CH ANG DS OOI JA

Citation: Ch. Ling et al., THE EFFECTS OF POLYSILICON DOPANT DEPLETION AND FOWLER-NORDHEIM TUNNELING ON THE CHARACTERISTICS OF N-OXIDE-SILICON CAPACITORS( POLYSILICON), Semiconductor science and technology, 12(3), 1997, pp. 245-251

Authors: LING CH GOH YH OOI JA

Citation: Ch. Ling et al., FOWLER-NORDHEIM STRESS DEGRADATION IN GATE OXIDE - RESULTS FROM GATE-TO-DRAIN CAPACITANCE AND CHARGE-PUMPING CURRENT, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 681-683

Authors: LING CH OOI JA ANG DS

Citation: Ch. Ling et al., EFFECTS OF TUNGSTEN SILICIDATION ON FOWLER-NORDHEIM TUNNELING CURRENTAND CHARGE TRAPPING IN POLYSILICON-OXIDE-SILICON CAPACITORS, Electronics Letters, 32(10), 1996, pp. 933-934