FOWLER-NORDHEIM STRESS DEGRADATION IN GATE OXIDE - RESULTS FROM GATE-TO-DRAIN CAPACITANCE AND CHARGE-PUMPING CURRENT

Authors
LING CH GOH YH OOI JA
Citation
Ch. Ling et al., FOWLER-NORDHEIM STRESS DEGRADATION IN GATE OXIDE - RESULTS FROM GATE-TO-DRAIN CAPACITANCE AND CHARGE-PUMPING CURRENT, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 681-683
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
4
Year of publication
1997
Pages
681 - 683
Database
ISI
SICI code
0018-9383(1997)44:4<681:FSDIGO>2.0.ZU;2-R
Abstract
The buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET, Results from gate-to-drain capacitance and charge pumpi ng current show a steady increase in positive charge near the anode in terface. Interface trap generation becomes significant when injected e lectron fluence exceeds similar to 10(14) cm(-2), and dominates net ch arge creation at higher fluence.