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Authors: LARSEN AN ORAIFEARTAIGH C BARKLIE RC HOLM B PRIOLO F FRANZO G LULLI G BIANCONI M NIPOTI R LINDNER JKN MESLI A GROB JJ CRISTIANO F HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218

Authors: ORAIFEARTAIGH C BARKLIE RC LARSEN AN PRIOLO F FRANZO G LULLI G BIANCONI M LINDNER JKN CRISTIANO F HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168

Authors: ORAIFEARTAIGH C LARSEN AN CRISTIANO F HEMMENT PLF
Citation: C. Oraifeartaigh et al., DOPANT ACTIVATION IN SB-IMPLANTED RELAXED SI1-XGEX ALLOY LAYERS GROWNON COMPOSITIONALLY GRADED BUFFERS, Applied physics A: Materials science & processing, 61(6), 1995, pp. 579-585

Authors: ORAIFEARTAIGH C BRADLEY L BARKLIE RC HODGE AM RICHMOND ED
Citation: C. Oraifeartaigh et al., SPIN-DEPENDENT PHOTOCONDUCTIVITY IN CVD-GROWN AND MBE-GROWN SILICON-ON-SAPPHIRE, Semiconductor science and technology, 10(12), 1995, pp. 1595-1603
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