Authors: RAYNAUD C GHAFFOUR K ORTOLLAND S LOCATELLI ML SOUIFI K GUILLOT G CHANTE JP

Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF SILICON-CARBIDE N(-IMPLANTED N(+) EMITTER()PP(+) DIODES WITH AN N), Journal of applied physics, 84(6), 1998, pp. 3073-3077

Authors: ORTOLLAND S RAYNAUD C LOCATELLI ML CHANTE JP SENES A

Citation: S. Ortolland et al., SURFACE EFFECTS ON CURRENT MECHANISMS IN 6H-SIC N(+)PP(+) STRUCTURES PASSIVATED WITH A DEPOSITED OXIDE, Journal of applied physics, 84(3), 1998, pp. 1688-1692

Authors: ORTOLLAND S

Citation: S. Ortolland, STUDY OF DIFFERENT EDGE TERMINATIONS USED FOR 6H-SIC POWER DIODES, Journal de physique. III, 7(4), 1997, pp. 809-818

Authors: PLANSON D LOCATELLI ML ORTOLLAND S CHANTE JP MITLEHNER H STEPHANI D

Citation: D. Planson et al., PERIPHERY PROTECTION FOR SILICON-CARBIDE DEVICES - STATE-OF-THE-ART AND SIMULATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 210-217

Authors: ORTOLLAND S RAYNAUD C CHANTE JP LOCATELLI ML LEBEDEV AA ANDREEV AN SAVKINA NS CHELNOKOV VE RASTEGAEVA MG SYRKIN AL

Citation: S. Ortolland et al., EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES, Journal of applied physics, 80(9), 1996, pp. 5464-5468