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Results: 1-11 |
Results: 11
RARE-EARTH ION SIZE DEPENDENCE OF THE T-C OF THE RE-123 HTSC WITHIN THE (D-WAVE DESCRIPTION OF THEIR SUPERCONDUCTING STATE(S))
Authors: TANG IM OSOTCHAN T LEELAPRUTE S
Citation: Im. Tang et al., RARE-EARTH ION SIZE DEPENDENCE OF THE T-C OF THE RE-123 HTSC WITHIN THE (D-WAVE DESCRIPTION OF THEIR SUPERCONDUCTING STATE(S)), Physics letters. A, 244(5), 1998, pp. 442-448
THE ROLE OF CHAIN SUPERCONDUCTIVITY IN THE 123-HTSC - A MICROSCOPIC APPROACH
Authors: TANG IM LEELAPRUTE S OSOTCHAN T
Citation: Im. Tang et al., THE ROLE OF CHAIN SUPERCONDUCTIVITY IN THE 123-HTSC - A MICROSCOPIC APPROACH, Solid state communications, 106(4), 1998, pp. 221-225
CORRELATION BETWEEN THE ORTHORHOMBICITY AND THE TRANSITION-TEMPERATURES OF THE 123-RARE-EARTH SERIES SUPERCONDUCTORS
Authors: TANG IM LEELAPRUTE S OSOTCHAN T
Citation: Im. Tang et al., CORRELATION BETWEEN THE ORTHORHOMBICITY AND THE TRANSITION-TEMPERATURES OF THE 123-RARE-EARTH SERIES SUPERCONDUCTORS, Solid state communications, 103(10), 1997, pp. 577-580
TRANSPORT MECHANISM OF GAMMA-BAND AND X-BAND ELECTRONS IN ALXGA1-XAS ALAS/GAAS DOUBLE-BARRIER QUANTUM-WELL INFRARED PHOTODETECTORS/
Authors: OSOTCHAN T CHIN VWL TANSLEY TL
Citation: T. Osotchan et al., TRANSPORT MECHANISM OF GAMMA-BAND AND X-BAND ELECTRONS IN ALXGA1-XAS ALAS/GAAS DOUBLE-BARRIER QUANTUM-WELL INFRARED PHOTODETECTORS/, Physical review. B, Condensed matter, 54(3), 1996, pp. 2059-2066
TRANSITION IN (001)ALGAAS ALAS/GAAS DOUBLE-BARRIER QUANTUM STRUCTURE FOR INFRARED PHOTODETECTION/
Authors: OSOTCHAN T CHIN VWL TANSLEY TL
Citation: T. Osotchan et al., TRANSITION IN (001)ALGAAS ALAS/GAAS DOUBLE-BARRIER QUANTUM STRUCTURE FOR INFRARED PHOTODETECTION/, Journal of applied physics, 80(9), 1996, pp. 5342-5347
NONCONTACT THICKNESS AND COMPOSITION ASSESSMENT OF A STRAINED ALGAAS ALAS/INGAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL STRUCTURE/
Authors: CHIN VWL EGAN RJ OSOTCHAN T VAUGHAN MR ANDERSON SC
Citation: Vwl. Chin et al., NONCONTACT THICKNESS AND COMPOSITION ASSESSMENT OF A STRAINED ALGAAS ALAS/INGAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL STRUCTURE/, Journal of applied physics, 80(4), 1996, pp. 2521-2523
MBE AND MOCVD GROWTH OF ALGAAS-ALAS-GAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL INFRARED DETECTOR
Authors: OSOTCHAN T CHIN VWL TANSLEY TL USHER BF CLARK A
Citation: T. Osotchan et al., MBE AND MOCVD GROWTH OF ALGAAS-ALAS-GAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL INFRARED DETECTOR, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 176-179
CURRENT CHARACTERISTICS OF THE DOUBLE-BARRIER AL0.25GA0.75AS AL0.45GA0.55AS/GAAS SINGLE-QUANTUM-WELL STRUCTURES/
Authors: OSOTCHAN T CHIN VWL TANSLEY TL
Citation: T. Osotchan et al., CURRENT CHARACTERISTICS OF THE DOUBLE-BARRIER AL0.25GA0.75AS AL0.45GA0.55AS/GAAS SINGLE-QUANTUM-WELL STRUCTURES/, Physical review. B, Condensed matter, 52(7), 1995, pp. 5202-5209
ELECTRON-MOBILITY IN IN0.53GA0.47AS AS A FUNCTION OF CONCENTRATION AND TEMPERATURE
Authors: CHIN VWL OSOTCHAN T TANSLEY TL
Citation: Vwl. Chin et al., ELECTRON-MOBILITY IN IN0.53GA0.47AS AS A FUNCTION OF CONCENTRATION AND TEMPERATURE, Microelectronics, 26(7), 1995, pp. 653-657
ELECTRONIC BAND-STRUCTURE OF ALXGA1-XAS ALYGA1-YAS/GAAS DOUBLE-BARRIER SUPERLATTICES/
Authors: OSOTCHAN T CHIN VWL VAUGHAN MR TANSLEY TL GOLDYS EM
Citation: T. Osotchan et al., ELECTRONIC BAND-STRUCTURE OF ALXGA1-XAS ALYGA1-YAS/GAAS DOUBLE-BARRIER SUPERLATTICES/, Physical review. B, Condensed matter, 50(4), 1994, pp. 2409-2419
HALL AND DRIFT MOBILITIES IN MOLECULAR-BEAM EPITAXIAL GROWN GAAS
Authors: CHIN VWL OSOTCHAN T VAUGHAN MR TANSLEY TL GRIFFITHS GJ KACHWALLA Z
Citation: Vwl. Chin et al., HALL AND DRIFT MOBILITIES IN MOLECULAR-BEAM EPITAXIAL GROWN GAAS, Journal of electronic materials, 22(11), 1993, pp. 1317-1321
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