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Results: 1-8 |
Results: 8
ANISOTROPIC ETCHING OF INP WITH LOW SIDEWALL AND SURFACE-INDUCED DAMAGE IN INDUCTIVELY-COUPLED PLASMA-ETCHING USING SICL4
Authors: ETRILLARD J OSSART P PATRIARCHE G JUHEL M BRESSE JF DAGUET C
Citation: J. Etrillard et al., ANISOTROPIC ETCHING OF INP WITH LOW SIDEWALL AND SURFACE-INDUCED DAMAGE IN INDUCTIVELY-COUPLED PLASMA-ETCHING USING SICL4, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 626-632
UV-DEPOSITED SILICON-NITRIDE COUPLED WITH XEF2 SURFACE CLEANING FOR III-V OPTOELECTRONIC DEVICE PASSIVATION
Authors: CHUN LSHK COURANT JL FALCOU A OSSART P POST G
Citation: Lshk. Chun et al., UV-DEPOSITED SILICON-NITRIDE COUPLED WITH XEF2 SURFACE CLEANING FOR III-V OPTOELECTRONIC DEVICE PASSIVATION, Microelectronic engineering, 36(1-4), 1997, pp. 69-72
ADVANTAGES OF PHOTON TREATMENTS FOR PRODUCTION OF HIGH-QUALITY COMPONENTS III-V
Authors: FLICSTEIN J MBA J OSSART P LESOLLIEC JM
Citation: J. Flicstein et al., ADVANTAGES OF PHOTON TREATMENTS FOR PRODUCTION OF HIGH-QUALITY COMPONENTS III-V, Annales de physique, 22, 1997, pp. 269-276
SIDEWALL AND SURFACE-INDUCED DAMAGE COMPARISON BETWEEN REACTIVE ION ETCHING AND INDUCTIVE PLASMA-ETCHING OF INP USING A CH4 H-2/O-2 GAS-MIXTURE/
Authors: ETRILLARD J HELIOT F OSSART P JUHEL M PATRIARCHE G CARCENAC P VIEU C PUECH M MAQUIN P
Citation: J. Etrillard et al., SIDEWALL AND SURFACE-INDUCED DAMAGE COMPARISON BETWEEN REACTIVE ION ETCHING AND INDUCTIVE PLASMA-ETCHING OF INP USING A CH4 H-2/O-2 GAS-MIXTURE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1056-1061
SION LARGE-AREA DEPOSITION WITH A DEEP-UV FLASH ARGON KRYPTON LAMP/
Authors: FLICSTEIN J MBA J LESCAUT B VITEL Y OSSART P LICOPPE C
Citation: J. Flicstein et al., SION LARGE-AREA DEPOSITION WITH A DEEP-UV FLASH ARGON KRYPTON LAMP/, Applied surface science, 106, 1996, pp. 44-50
CBE GROWTH OF INGAAS(P) ALLOYS USING TDMAAS AND TBP
Authors: LAMARE B BENCHIMOL JL OSSART P
Citation: B. Lamare et al., CBE GROWTH OF INGAAS(P) ALLOYS USING TDMAAS AND TBP, Journal of crystal growth, 164(1-4), 1996, pp. 122-124
DRY-ETCHING OF INP IN HELICON HBR PLASMA - MORPHOLOGY AND CHARACTERIZATION OF SURFACE DAMAGE
Authors: ETRILLARD J OSSART P PATRIARCHE G FRANCOU JM
Citation: J. Etrillard et al., DRY-ETCHING OF INP IN HELICON HBR PLASMA - MORPHOLOGY AND CHARACTERIZATION OF SURFACE DAMAGE, Journal de physique. III, 5(5), 1995, pp. 467-481
INFLUENCE OF PRESSURE ON NITROGEN INCORPORATION IN ULTRAVIOLET CHEMICAL-VAPOR-DEPOSITED SIO2-FILMS
Authors: DEBAUCHE C LICOPPE C OSSART P DEVINE RAB ROCHET F
Citation: C. Debauche et al., INFLUENCE OF PRESSURE ON NITROGEN INCORPORATION IN ULTRAVIOLET CHEMICAL-VAPOR-DEPOSITED SIO2-FILMS, Journal of applied physics, 74(9), 1993, pp. 5672-5678
Risultati: 1-8 |