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Authors: BANDIC ZZ MCGILL TC HAUENSTEIN RJ OSTEEN ML

Citation: Zz. Bandic et al., MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE NITROGEN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS HETEROSTRUCTURES - EXPERIMENTS AND KINETIC MODELING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2948-2951

Authors: GOLDMAN RS FEENSTRA RM BRINER BG OSTEEN ML HAUENSTEIN RJ

Citation: Rs. Goldman et al., ATOMIC-SCALE STRUCTURE AND ELECTRONIC-PROPERTIES OF GAN GAAS SUPERLATTICES/, Applied physics letters, 69(24), 1996, pp. 3698-3700

Authors: BANDIC ZZ HAUENSTEIN RJ OSTEEN ML MCGILL TC

Citation: Zz. Bandic et al., KINETIC MODELING OF MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS-BASED HETEROSTRUCTURES/, Applied physics letters, 68(11), 1996, pp. 1510-1512

Authors: HAUENSTEIN RJ COLLINS DA CAI XP OSTEEN ML MCGILL TC

Citation: Rj. Hauenstein et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF NITROGEN PLASMA INTERACTIONS WITH A GAAS (100) SURFACE, Applied physics letters, 66(21), 1995, pp. 2861-2863